STD11NM65N Discrete Semiconductor Products |
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Allicdata Part #: | 497-13352-2-ND |
Manufacturer Part#: |
STD11NM65N |
Price: | $ 1.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N CH 650V 11A DPAK |
More Detail: | N-Channel 650V 11A (Tc) 110W (Tc) Surface Mount DP... |
DataSheet: | STD11NM65N Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.98286 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 455 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STD11NM65N is a MOSFET transistion device that offers low on-state resistance and high Avalanche resistance. The device is suitable for high-current switching applications in the automotive and consumer electronics industry. It is used in automotive power steering systems, door locks, and power supplies.
A MOSFET is an insulated-gate field effect transistor, which behaves like a variable resistor. It is used in a wide variety of digital and analog applications, such as in switching circuits and as a voltage regulator. The STD11NM65N offers a simple and robust solution for high-current switching applications, offering low on-state resistance and high Avalanche resistance.
The operating principle of the STD11NM65N can be explained as follows. It consists of a source, drain, and gate. When a positive voltage is applied to the gate, it creates an electric field which forces the electrons in the source and drain to move from one side of the channel to the other. This movement of electrons is what allows current to flow through the drain and source. The amount of current that flows is determined by the resistance of the channel, which is controlled by the voltage applied to the gate.
The STD11NM65N is well-suited for switching applications with high-current loads such as automotive power steering systems, door locks, and power supplies. It can be used in a variety of applications, such as switching large loads with high efficiency, and can also be used in high-frequency applications. The device can be matched with different gate drivers, and its behavior can be tuned to meet specific requirements.
The STD11NM65N offers many advantages over other types of transistors. It is designed to be robust and reliable, in order to withstand high current switching, and is available in a variety of packages, allowing for easy implementation in the desired application. Its high Avalanche resistance makes it suitable for applications with high-voltage transients, and its low on-state resistance makes it ideal for energy-saving applications. Additionally, the device is relatively low cost, making it suitable even for cost-sensitive applications.
In summary, the STD11NM65N is a MOSFET transistion device that offers low on-state resistance, high Avalanche resistance, and is suitable for high-current switching applications. It can be used in a variety of applications, such as automotive power steering systems and power supplies, and offers many advantages over other types of devices. With its robust design, low cost, and ease of implementation, the device is well-suited for a variety of switching applications.
The specific data is subject to PDF, and the above content is for reference
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