STD120N4F6 Allicdata Electronics
Allicdata Part #:

497-10781-2-ND

Manufacturer Part#:

STD120N4F6

Price: $ 1.02
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 40V 80A DPAK
More Detail: N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount DPA...
DataSheet: STD120N4F6 datasheetSTD120N4F6 Datasheet/PDF
Quantity: 1000
1 +: $ 1.02000
10 +: $ 0.98940
100 +: $ 0.96900
1000 +: $ 0.94860
10000 +: $ 0.91800
Stock 1000Can Ship Immediately
$ 1.02
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Series: Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Rds On (Max) @ Id, Vgs: 4 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Transistors have been enormous drivers of information technology advancement, with the FET (field-effect transistor) being a particular favorite of engineers. The STD120N4F6 is a preferred FET by many engineers, and in this article, we will look into its application fields and working principle.

The STD120N4F6 is a semiconductor designed for automotive application-specific integrated circuits (ASICs). It’s part of the STD family, offering superior performance and cost savings when compared to other single-transistor solutions. The chip is equipped with a N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) embedded in a TO-252 package. It has an impressive breakdown voltage (BVDSS) of 120V, has a gate symmetry of +/- 2V, and a drain current of 4A. While it’s equipped to handle applications that require maximum current levels, it also provides good thermal resistance at low drain-source voltages (RDS(ON) between 10mΩ and 20mΩ. This makes it ideal for applications such as automotive power conversion, lighting control, battery management, and any other task that requires high-level current control.

In terms of its working principle, the STD120N4F6 is a voltage-controlled device, which means that its performance is based on the voltage applied to the gate. When a certain level of voltage is applied, the device becomes activated, allowing current to flow across the source and drain. As the voltage increases, the amount of current that flows increases as well. The chip is designed to protect the transistor from current surges and ensure that an overcurrent doesn’t occur.

The STD120N4F6 is an excellent MOSFET transistor that can be used in a variety of automotive applications due to its high-level current handling capabilities and its low drain-source resistance. It has been used in the past in applications such as light dimmers and power regulators and this is likely to remain the case in the future. Its ability to handle high-level currents efficiently and its good thermal performance make it a great all-round choice for automotive applications.

The specific data is subject to PDF, and the above content is for reference

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