STD120N4LF6 Allicdata Electronics
Allicdata Part #:

497-11097-2-ND

Manufacturer Part#:

STD120N4LF6

Price: $ 1.02
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 40V 80A DPAK
More Detail: N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount DPA...
DataSheet: STD120N4LF6 datasheetSTD120N4LF6 Datasheet/PDF
Quantity: 1000
1 +: $ 1.02000
10 +: $ 0.98940
100 +: $ 0.96900
1000 +: $ 0.94860
10000 +: $ 0.91800
Stock 1000Can Ship Immediately
$ 1.02
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Series: Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Rds On (Max) @ Id, Vgs: 4 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD120N4LF6 is a by Solid State Devices, Inc., and is part of their Power Extruded family of N-Channel devices. This particular device is a single, 4-amp, N-Channel Enhancement Mode MOSFET, and has a drain-source voltage of 120 volts. The device has an on-resistance of only 0.009 ohms and an impressive gate-source threshold voltage of only 0.2 volts. It also has an input capacitance of 800pF and a typical output capacitance of 120pF.

MOSFETs, or Metal Oxide Semiconductor Field Effect Transistors, are a type of transistor that uses an electric field to control the amount of current flowing through it. They are commonly used in switching and amplifier applications, due to their wide range of characteristics and fast switching time. MOSFETs are the most commonly used type of transistor in today\'s electronics. The STD120N4LF6, in particular, is a highly efficient device which is suitable for use in a variety of applications.

There are a few primary application fields that the STD120N4LF6 is best suited for. The first is power conversion, meaning any device that requires switching higher voltages. This device is particularly useful for this type of application due to its low on-resistance rating of only 0.009 ohms, which reduces power loss significantly. Other applications for the STD120N4LF6 include motor drives, power supplies, and power amplifiers. Due to its fast switching speed, the device can be used as a switching element for controlling current in these types of applications.

The working principle of the STD120N4LF6 is relatively simple. When voltage is applied to the gate terminal, an electric field is created which causes it to open up and turn on. This allows current to flow freely from the source to the drain terminal. When the voltage is removed from the gate, the electric field collapses and the device turns off, preventing current from flowing.

While MOSFETs like the STD120N4LF6 are relatively simple devices, they have a wide variety of applications and can be a highly efficient alternative to other types of transistors. Their low on-resistance ratings and fast switching speeds make them ideal for use in power conversion applications, and other applications like motor drives, power supplies, and power amplifiers.

The specific data is subject to PDF, and the above content is for reference

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