STD134N4F7AG Allicdata Electronics
Allicdata Part #:

497-17306-2-ND

Manufacturer Part#:

STD134N4F7AG

Price: $ 0.53
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CHANNEL 40V 80A DPAK
More Detail: N-Channel 40V 80A (Tc) 134W (Tc) Surface Mount DPA...
DataSheet: STD134N4F7AG datasheetSTD134N4F7AG Datasheet/PDF
Quantity: 1000
2500 +: $ 0.47165
Stock 1000Can Ship Immediately
$ 0.53
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 134W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2790pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Series: Automotive, AEC-Q101, STripFET™
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD134N4F7AG is a single N-Channel MOSFET that largely caters to applications in power management solutions, power switch solutions and load switching solutions. This type of MOSFET can be used in a wide variety of different applications, which are mainly found in the automotive, industrial, medical, computer, and consumer electronics industries thanks to the device’s ability to switch and amplify a signal with the help of a gate voltage, as well as offering efficient signal switching performance.

Features

The STD134N4F7AG is comprised of a proprietary Ultra-Low Gate Charge (ULGC) technology, with a comprehensive suite of features that enable quick switching and precise signal control. It features an on-resistance RDS(on) of only 83 mΩ, an easy-to-operate gate threshold voltage of 1.8 V and an Ultra-Low Gate-Charge (ULGC) of 2.6 nC. Furthermore, the device has a breakdown voltage of 40 V, a drain-source voltage VDS of 20 V and drain leakage current of 5 μA. And since it operates over a temperature region of -55 to 125 °C, it can be used in a variety of applications.

Application Field and Working Principle

The STD134N4F7AG finds application in a variety of power management solutions, power switch solutions and load switching solutions. It is often used for DC/DC converter, AC/ DC converters, motor/ servo/relay drives, as well as solid state relays.

The working principle of the STD134N4F7AG is based on the principle of field-effect transistor (FET), which is a transistor that utilizes an electric field to control the conductivity of a channel of current. Hence, the FET will only start to conduct when a certain gate voltage is applied to it. When the applied voltage exceeds the threshold voltage, the FET is turned on and the drain current is controlled as per the applied gate voltage.

For instance, when applying a 5 V gate voltage, the drain current is increased dramatically, whereas for a 0.4 V gate voltage, the drain current is controlled amount relatively lower. Therefore, this allows for precise control over the current in the device, making it suitable for various applications.

Conclusion

The STD134N4F7AG is a single N-Channel MOSFET that is used for power switch solutions and load switching solutions. It offers quick switching, precise signal control and a comprehensive suite of features in a small package. Furthermore, it is able to maintain a breakdown voltage of 40 V, and a drain-source voltage VDS of 20 V, while requiring a gate threshold voltage of only 1.8 V. Lastly, the Ultra-Low Gate Charge (ULGC) technology makes it highly efficient and suitable for a variety of different applications.

The specific data is subject to PDF, and the above content is for reference

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