STD13N60M2 Allicdata Electronics
Allicdata Part #:

497-13862-2-ND

Manufacturer Part#:

STD13N60M2

Price: $ 0.82
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 11A DPAK
More Detail: N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DP...
DataSheet: STD13N60M2 datasheetSTD13N60M2 Datasheet/PDF
Quantity: 1000
1 +: $ 0.82000
10 +: $ 0.79540
100 +: $ 0.77900
1000 +: $ 0.76260
10000 +: $ 0.73800
Stock 1000Can Ship Immediately
$ 0.82
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: MDmesh™ II Plus
Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD13N60M2 is a part of a family of n-channel enhancement mode MOSFETs that can be used for various applications, such as high speed switching, low voltage power switching, and linear regulation. This MOSFET is unique in the family in that it has a maximum drain-source voltage (Vds) of 600V, which is higher than other models. In addition, it can carry a current (Id) of 13A, making it well-suited for medium-power applications. The STD13N60M2 also integrates advanced design techniques, making it highly effective and efficient to use in a multitude of different components.

The STD13N60M2 has two main application fields--switching and linear regulation. As a switching device, it can be used as a low voltage switch for a variety of systems, such as computer power supplies, AC/DC adapter circuits, and motor control systems. In addition, it can be used for high power switching in various power converters and power supplies, where it can efficiently and rapidly switch electricity from one circuit to another. As a linear regulation device, it can regulate electric current to achieve a desired level and prevent losses in power. This type of regulation is often used in power conversion, motor control, and audio amplifier circuits.

The working principle of the STD13N60M2 is based on the same principle as all other n-channel MOSFETs. When a voltage is applied to the gate, a channel is formed between the source and drain terminals. The strength of the electric field created in the channel is directly proportional to the gate voltage. This electric field can move electrons in the channel, increasing the conductivity of the transistor. By increasing or decreasing the gate voltage, the flow of electrons can be controlled, resulting in either an on or off state.

The STD13N60M2 can also be used as an analog switch, using the same process as described above. When a small amount of voltage is applied to the gate, the transistor will produce a linear current, allowing it to be used for applications such as audio or video amplifiers or level shifters. This flexibility makes the MOSFET ideal for a wide range of applications.

The STD13N60M2 is a powerful and versatile n-channel enhancement mode MOSFET that can be used for a variety of different applications, such as low voltage switching, high power switching, and linear regulation. By controlling the gate voltage, the flow of electrons can be controlled, allowing the MOSFET to be used as either a switching or linear regulation device. In addition, it can also be used as an analog switch, providing flexibility and versatility for any kind of electrical application.

The specific data is subject to PDF, and the above content is for reference

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