STD13N65M2 Allicdata Electronics
Allicdata Part #:

497-15460-2-ND

Manufacturer Part#:

STD13N65M2

Price: $ 0.60
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 10A DPAK
More Detail: N-Channel 650V 10A (Tc) 110W (Tc) Surface Mount DP...
DataSheet: STD13N65M2 datasheetSTD13N65M2 Datasheet/PDF
Quantity: 2500
1 +: $ 0.60000
10 +: $ 0.58200
100 +: $ 0.57000
1000 +: $ 0.55800
10000 +: $ 0.54000
Stock 2500Can Ship Immediately
$ 0.6
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: MDmesh™ M2
Rds On (Max) @ Id, Vgs: 430 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD13N65M2 is a single, N-channel MOSFET chip that comes in a Super TO-220 package. It is used in applications ranging from power management to analog signal processing. This chip is designed to handle a maximum drain-source voltage of 650 V, a drain current of 13 A, an on resistance of 6.5 mΩ, and an avalanche energy of 150 mJ.

The chip has one source terminal, one drain terminal, and one gate terminal. It is designed to be used as either a high-side or low-side switch in a variety of applications. It can also be used as an input buffer or as an output driver. The chip can be controlled with a voltage, such as TTL logic.

The STD13N65M2 is designed with an electrostatic discharge (ESD) protection circuit. This allows the device to withstand extremely high energy spikes without damage to the chip or system. This is especially useful for use in handheld electronic devices which can be susceptible to static electricity.

The working principle of the STD13N65M2 is based on the idea of a channel resistance that is modulated by an applied voltage between the gate and source terminals. When a positive voltage is applied to the gate terminal, a channel forms from the source to the drain and current flows. As the voltage at the gate increases, the channel resistance decreases and more current is allowed to flow through the device.

The STD13N65M2 is most commonly used in power management circuits. A common application is to use it as a switch in motor control circuits. Here, it is used to control the current to the motor, either increasing or decreasing it as needed. It can also be used in voltage regulation and power conversion systems, where it is used to control the current flow between different power sources.

The STD13N65M2 is also used as an input buffer in analog signal processing circuits. Here, its high channel resistance is used to reduce noise and protect against electrical interference. Another application is in power supply circuits, where it is used to switch between different voltage inputs.

In summary, the STD13N65M2 is a single, N-channel MOSFET chip designed for use in a variety of applications from power management to analog signal processing. It features a high-drain current capability, low on-resistance, and electrostatic protection. It is most commonly used in power management circuits and analog signal processing circuits.

The specific data is subject to PDF, and the above content is for reference

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