STD150NH02L-1

Vgs(th) (Max) @ Id:	1.8V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4450pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	93nC @ 10V
Series:	STripFET™ III
Rds On (Max) @ Id, Vgs:	3.5 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	150A (Tc)
Drain to Source Voltage (Vdss):	24V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The STD150NH02L-1 is an N-channel MOSFET from SMC Diode Solutions. It offers low on-resistance and improved circuit density when compared to previous generations of MOSFETs. Its small size and thermal characteristics make it suitable for a variety of applications. In this article we will discuss the application field and working principle of the STD150NH02L-1.

Applications

The STD150NH02L-1 can be used in a variety of applications. It is commonly used in power conversion, such as DC-DC conversion, DC-AC conversion, and power management. It is also used in industrial automation and automotive applications. The low on-resistance of the MOSFET makes it suitable for applications where power efficiency is paramount.

Higher Voltage Applications

The STD150NH02L-1 is suitable for applications requiring higher voltage operation. It has a voltage rating of 150V and can handle high peak currents of up to 30A. It is also capable of operating at temperatures up to 150°C which makes it suitable for high temperature environments.

Working Principle of the STD150NH02L-1

The STD150NH02L-1 utilizes an N-channel MOSFET design. In a MOSFET, the current flows from the drain to the source when a voltage is applied to the gate. This type of transistors require a relatively low amount of gate voltage to turn on, compared to other types of transistors.The gate voltage is applied to the gate terminal of the MOSFET and is used to control the drain current. The gate voltage regulates the flow of current through the channel, by increasing or decreasing the channel’s resistance. As the gate voltage is increased, the channel’s resistance is decreased, allowing more current to flow through it.

Conclusion

The STD150NH02L-1 is a versatile and powerful N-channel MOSFET. Its low on-resistance and overall design make it suitable for a variety of applications. Its high current and temperature ratings make it ideal for high voltage and high temperature applications. The MOSFET utilizes an N-channel design, along with a gate voltage to control the drain current.

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