STD155N3H6 Allicdata Electronics

STD155N3H6 Discrete Semiconductor Products

Allicdata Part #:

497-11307-2-ND

Manufacturer Part#:

STD155N3H6

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 30V 80A DPAK
More Detail: N-Channel 30V 80A (Tc) 110W (Tc) Surface Mount DPA...
DataSheet: STD155N3H6 datasheetSTD155N3H6 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Series: DeepGATE™, STripFET™ VI
Rds On (Max) @ Id, Vgs: 3 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The STD155N3H6 is a popular single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from ST Microelectronics. This MOSFET offers superior drain-source breakdown voltage, gate-source breakdown voltage, on-state resistance, low gate threshold voltage and output capacitance. It is well suited for use in power switching applications, particularly in automotive and industrial equipment. The STD155N3H6 is also available as a thin-film (TFTFET).

The primary purpose of the STD155N3H6 is to provide power amplification and regulation. This MOSFET can be used to regulate the current flow between two points in an electrical circuit. It is typically used to regulate the current through a load such as a motor, amplifier, or other electronic device. The MOSFET acts as a switch-like device that can either turn on or off the current flow.

The STD155N3H6 works by transforming the electrical energy from one form to another. It does this by utilizing the principle of thermionic emission. When a voltage is applied to the Gate terminal of a MOSFET, electrons from the drain region of the device are emitted across the channel and onto the source region. This in turn creates an avalanche-effect, which leads to current flow through the device. The ratio of the magnitude of the voltage applied to the gate terminal to the voltage produced across the source and drain terminals is referred to as the transconductance.

The main advantages of using the STD155N3H6 are its high efficiency and excellent temperature characteristics. The device has a high operating temperature range of -50 to +200 Degrees Celsius, allowing for reliable operation in a wide range of environmental conditions. Its low gate threshold voltage and on-state resistance make it ideal for high power switching applications. Furthermore, it offers good noise immunity, making it suitable for use in environments that contain a large amount of EMI (Electromagnetic Interference).

In addition to its use as a switch, the STD155N3H6 can also be used for signal transmission or amplification. As a result, the STD155N3H6 is well suited for use in power amplifier circuits, audio preamps and power regulators. The device is often used in audio systems, such as car audio systems, to provide amplification and regulation of the audio signal. It can also be used to regulate the power output of power supplies in a variety of electronic devices.

The STD155N3H6 is an excellent choice for a wide range of applications, due to its high drain-source breakdown voltage and excellent switching characteristics. It provides reliable performance in high power switching applications, signal transmission and amplification. Furthermore, its low gate threshold voltage and on-state resistance make it ideal for a variety of audio preamplifier and power regulator circuits.

The specific data is subject to PDF, and the above content is for reference

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