
STD155N3H6 Discrete Semiconductor Products |
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Allicdata Part #: | 497-11307-2-ND |
Manufacturer Part#: |
STD155N3H6 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 80A DPAK |
More Detail: | N-Channel 30V 80A (Tc) 110W (Tc) Surface Mount DPA... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3650pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 10V |
Series: | DeepGATE™, STripFET™ VI |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STD155N3H6 is a popular single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from ST Microelectronics. This MOSFET offers superior drain-source breakdown voltage, gate-source breakdown voltage, on-state resistance, low gate threshold voltage and output capacitance. It is well suited for use in power switching applications, particularly in automotive and industrial equipment. The STD155N3H6 is also available as a thin-film (TFTFET).
The primary purpose of the STD155N3H6 is to provide power amplification and regulation. This MOSFET can be used to regulate the current flow between two points in an electrical circuit. It is typically used to regulate the current through a load such as a motor, amplifier, or other electronic device. The MOSFET acts as a switch-like device that can either turn on or off the current flow.
The STD155N3H6 works by transforming the electrical energy from one form to another. It does this by utilizing the principle of thermionic emission. When a voltage is applied to the Gate terminal of a MOSFET, electrons from the drain region of the device are emitted across the channel and onto the source region. This in turn creates an avalanche-effect, which leads to current flow through the device. The ratio of the magnitude of the voltage applied to the gate terminal to the voltage produced across the source and drain terminals is referred to as the transconductance.
The main advantages of using the STD155N3H6 are its high efficiency and excellent temperature characteristics. The device has a high operating temperature range of -50 to +200 Degrees Celsius, allowing for reliable operation in a wide range of environmental conditions. Its low gate threshold voltage and on-state resistance make it ideal for high power switching applications. Furthermore, it offers good noise immunity, making it suitable for use in environments that contain a large amount of EMI (Electromagnetic Interference).
In addition to its use as a switch, the STD155N3H6 can also be used for signal transmission or amplification. As a result, the STD155N3H6 is well suited for use in power amplifier circuits, audio preamps and power regulators. The device is often used in audio systems, such as car audio systems, to provide amplification and regulation of the audio signal. It can also be used to regulate the power output of power supplies in a variety of electronic devices.
The STD155N3H6 is an excellent choice for a wide range of applications, due to its high drain-source breakdown voltage and excellent switching characteristics. It provides reliable performance in high power switching applications, signal transmission and amplification. Furthermore, its low gate threshold voltage and on-state resistance make it ideal for a variety of audio preamplifier and power regulator circuits.
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