| Allicdata Part #: | 497-13641-2-ND |
| Manufacturer Part#: |
STD15N65M5 |
| Price: | $ 1.58 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N CH 650V 11A DPAK |
| More Detail: | N-Channel 650V 11A (Tc) 85W (Tc) Surface Mount DPA... |
| DataSheet: | STD15N65M5 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.58000 |
| 10 +: | $ 1.53260 |
| 100 +: | $ 1.50100 |
| 1000 +: | $ 1.46940 |
| 10000 +: | $ 1.42200 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 85W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 816pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
| Series: | MDmesh™ V |
| Rds On (Max) @ Id, Vgs: | 340 mOhm @ 5.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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Transistors, specifically Field Effect Transistors (FETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are key components for a variety of different application fields. Among them, single terminals are devices that combine the features of both FET and MOSFETs, in order to offer improved performance and efficiency. One of these single terminal devices is the STD15N65M5, an advanced and excellent choice for many areas.
The remarkable features of the STD15N65M5 makes this type of device a great option for all kinds of applications, both commercial and industrial, including mobile communications, power supplies, computer and peripheral design, heating, automotive and domestic appliances. It is also ideal for the production of integrated circuits in which the current has to be responsive and with high rates of efficiency. In other words, this single terminal device performs excellently in a wide spectrum of applications.
The STD15N65M5 can be mainly characterized with two functions, which are: Externally Compensated Enhanced Avalanche Energy and enhanced thermal resistance, making this type of device a reliable choice for any application. When it comes to the working principle of the STD15N65M5, these devices work combining the features of both FET and MOSFETs into a single terminal. In each device, the gate has two terminals, while the drain is connected to the two sources of the transistor. This type of device is mainly used in applications where the current has to be not only fast but also responsive. The main advantages of the single terminal devices are that they offer improved speed, excellent efficiency and reliability.
In terms of its characteristics, the main features of the STD15N65M5 include low RDS(ON), high drain-source voltage, a low static gate offset voltage, and good ESD tolerance. Moreover, the STD15N65M5 includes a high energy switching system, allowing it to reach high switching speeds, providing an even better performance. This type of device also offers low gate charge and low gate-source capacitance, which help reduce switching losses and ensure better efficiency. In conclusion, the STD15N65M5 together with its features, demonstrate to be a formidable single terminal device for a great variety of applications, offering excellent efficiency and reliability at the same time. Nevertheless, as with all electronic components, it is always essential to recognize their limitations and specifications, in order to use them in a safe and efficient manner.
The specific data is subject to PDF, and the above content is for reference
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STD15N65M5 Datasheet/PDF