
STD15NF10T4 Discrete Semiconductor Products |
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Allicdata Part #: | 497-7958-2-ND |
Manufacturer Part#: |
STD15NF10T4 |
Price: | $ 0.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 100V 23A DPAK |
More Detail: | N-Channel 100V 23A (Tc) 70W (Tc) Surface Mount DPA... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.48000 |
10 +: | $ 0.46560 |
100 +: | $ 0.45600 |
1000 +: | $ 0.44640 |
10000 +: | $ 0.43200 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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ST15NF10T4 Application Field and Working Principle
The ST15NF10T4 is a N-channel enhancement mode Power MOSFET, it is a type of Field Effect Transistor (FET) with a Gate-Source voltage of -10V and a continuous drain current of 15A. It is commonly used in power supplies and other applications requiring high power control. This device is very suitable for use in low voltage DC to DC converters as it can handle high currents with a low gate voltage.
Application Field
The ST15NF10T4 is used in a wide range of applications, such as in high-frequency power supplies, DC to DC converters, switching power supplies, inverters, high-efficiency lighting, and solar power systems. It is also used in audio amplifiers and other consumer electronic products. The device is well-suited for switching applications and its low gate voltage allows for high efficiency.
Working Principle
The ST15NF10T4 is a N-channel Drain-Source FET that works on the principle of electrostatic control. The Gate is formed with an insulated gate semiconductor material, which is the Gate Voltage with the gate voltage being negative. This negatively charges the insulated gate and increases the electric field between the source and drain. As the gate voltage increases, the resistivity between the source and the drain decreases. This allows the current to flow freely, able to be controlled by the Gate voltage.
When a positive voltage is applied to the gate, it increases the electric field between the source and drain and turns the device on. It is important to note that this voltage must be of a certain magnitude and the device must be able to withstand these levels. The drain current is proportional to the gate voltage for FETs, therefore allowing for current control with the gate voltage.
Conclusion
The ST15NF10T4 is an N-channel Enhancement-Mode Power MOSFET with a Gate-Source voltage of -10V and a continuous drain current of 15Amps. The device is used in a wide range of applications such as power supplies, inverters, and DC to DC converters. It is able to handle high currents with a low gate voltage and is well-suited for switching applications. The working principle of the transistor is based on the electrostatic control of the Gate voltage.
The specific data is subject to PDF, and the above content is for reference
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