STD15NF10T4 Allicdata Electronics

STD15NF10T4 Discrete Semiconductor Products

Allicdata Part #:

497-7958-2-ND

Manufacturer Part#:

STD15NF10T4

Price: $ 0.48
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 100V 23A DPAK
More Detail: N-Channel 100V 23A (Tc) 70W (Tc) Surface Mount DPA...
DataSheet: STD15NF10T4 datasheetSTD15NF10T4 Datasheet/PDF
Quantity: 1000
1 +: $ 0.48000
10 +: $ 0.46560
100 +: $ 0.45600
1000 +: $ 0.44640
10000 +: $ 0.43200
Stock 1000Can Ship Immediately
$ 0.48
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 70W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 65 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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ST15NF10T4 Application Field and Working Principle

The ST15NF10T4 is a N-channel enhancement mode Power MOSFET, it is a type of Field Effect Transistor (FET) with a Gate-Source voltage of -10V and a continuous drain current of 15A. It is commonly used in power supplies and other applications requiring high power control. This device is very suitable for use in low voltage DC to DC converters as it can handle high currents with a low gate voltage.

Application Field

The ST15NF10T4 is used in a wide range of applications, such as in high-frequency power supplies, DC to DC converters, switching power supplies, inverters, high-efficiency lighting, and solar power systems. It is also used in audio amplifiers and other consumer electronic products. The device is well-suited for switching applications and its low gate voltage allows for high efficiency.

Working Principle

The ST15NF10T4 is a N-channel Drain-Source FET that works on the principle of electrostatic control. The Gate is formed with an insulated gate semiconductor material, which is the Gate Voltage with the gate voltage being negative. This negatively charges the insulated gate and increases the electric field between the source and drain. As the gate voltage increases, the resistivity between the source and the drain decreases. This allows the current to flow freely, able to be controlled by the Gate voltage.

When a positive voltage is applied to the gate, it increases the electric field between the source and drain and turns the device on. It is important to note that this voltage must be of a certain magnitude and the device must be able to withstand these levels. The drain current is proportional to the gate voltage for FETs, therefore allowing for current control with the gate voltage.

Conclusion

The ST15NF10T4 is an N-channel Enhancement-Mode Power MOSFET with a Gate-Source voltage of -10V and a continuous drain current of 15Amps. The device is used in a wide range of applications such as power supplies, inverters, and DC to DC converters. It is able to handle high currents with a low gate voltage and is well-suited for switching applications. The working principle of the transistor is based on the electrostatic control of the Gate voltage.

The specific data is subject to PDF, and the above content is for reference

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