| Allicdata Part #: | 497-17844-2-ND |
| Manufacturer Part#: |
STD15P6F6AG |
| Price: | $ 0.18 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET PCH 60V 10A DPAK |
| More Detail: | P-Channel 60V 10A (Tc) 35W (Tc) Surface Mount DPAK |
| DataSheet: | STD15P6F6AG Datasheet/PDF |
| Quantity: | 2500 |
| 1 +: | $ 0.18000 |
| 10 +: | $ 0.17460 |
| 100 +: | $ 0.17100 |
| 1000 +: | $ 0.16740 |
| 10000 +: | $ 0.16200 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 175°C (TJ) |
| Power Dissipation (Max): | 35W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 340pF @ 48V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.4nC @ 10V |
| Series: | Automotive, AEC-Q101, STripFET™ F6 |
| Rds On (Max) @ Id, Vgs: | 160 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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A STD15P6F6AG is a discrete semiconductor device type which belongs to the family of FETs, MOSFETs, and Single devices. It is a junction-gate-fet device, also referred to as an insulated gate field-effect transistor, which is an important device for processing and controlling high frequency digital signals.
The main application field for the STD15P6F6AG is in automotive electronics, which include digital transmissions, power control systems, and anti-lock brakes. It can also be used in high frequency cellular telephones and as lots of other commercial products, such as audio amplifiers, audio processors, and stereo sound systems.
The working principle of a STD15P6F6AG is based on the transfer of electrons between a source and a drain when an electric field is applied to a gate insulator. This electric field is applied when a voltage is applied to the gate. When the gate voltage exceeds that of the source, the electrons transfer from the source to the gate and, then, to the drain. This creates and amplifies the output current. The electric field control makes the device versatile, as it can be used to set the current gain, regulate the flow of power, and control the frequency of the signal.
The STD15P6F6AG is composed of three components: a drain, a drain-gate junction, and a gate-source junction. The drain carries the output current from the device to the load, which is the device that is being controlled. The drain-gate junction is made of an insulation material, such as silicon dioxide, which prevents the electrons from passing through. Finally, the gate-source junction is made of an electric field material, such as indium-doped zinc oxide, which creates and amplifies the output current.
When the output of the device is off, the transistor\'s gate is not charged. In other words, there is no electric field between the drain and the gate, and the output current remains low. On the other hand, when the output of the device is on, the transistor’s gate voltage is set to a certain voltage, above that of the drain. This causes the electric field between the drain and the gate to increase and amplifies the output current. The electric field control also allows the device to be used to regulate the flow of power, which is essential for automotive applications such as transmissions and anti-lock brakes, as well as other applications such as digital signal processors, audio processors, and audio amplifiers.
The STD15P6F6AG is an ideal device for applications where a high frequency digital signal needs to be processed or controlled. It is an excellent choice for automotive electronics, audio processes, and stereo sound systems.
The specific data is subject to PDF, and the above content is for reference
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STD15P6F6AG Datasheet/PDF