STD16N60M2 Discrete Semiconductor Products |
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| Allicdata Part #: | 497-15461-2-ND |
| Manufacturer Part#: |
STD16N60M2 |
| Price: | $ 0.33 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V 12A DPAK |
| More Detail: | N-Channel 600V 12A (Tc) 110W (Tc) Surface Mount DP... |
| DataSheet: | STD16N60M2 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.33000 |
| 10 +: | $ 0.32010 |
| 100 +: | $ 0.31350 |
| 1000 +: | $ 0.30690 |
| 10000 +: | $ 0.29700 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 110W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
| Series: | MDmesh™ M2 |
| Rds On (Max) @ Id, Vgs: | 320 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The STD16N60M2, also known officially as a PowerMESH MOSFET, is a highly efficient, low-voltage, single-channel MOSFET. The device is designed to function optimally under a variety of conditions, from industrial to automotive applications. It features high current capability, low on-state resistance and low capacitance, enabling it to deliver superior performance in a wide range of power management applications. It is ideal for use in a number of applications, including power switches, high-speed switching, motor control and energy conversion.
The STD16N60M2 is a three-terminal, lateral-type MOSFET. The drain and source terminals form one side of the device, while the gate terminal forms the other side. When the device is off, the drain and source terminals are isolated, and the gate terminal is held at a slightly positive voltage relative to the drain and source terminals, preventing any current from flowing through the device. When a positive voltage is applied between the gate and the source terminals, it causes the output resistance of the device to decrease, allowing current to flow between the drain and source terminals.
The STD16N60M2 also features advanced parasitic n-channel inhibiting (PNI) technology, which helps to reduce the risk of critical latch-up by providing enhanced protection for both the drain and source terminals. PNI also helps to significantly reduce power losses in the device and improve efficiency. Additionally, the device is designed to withstand high levels of operation stress and can handle adverse ESD situations without suffering damage.
The STD16N60M2 is ideally suited for a wide range of applications and fields, such as in industrial and automotive applications. It can be used in applications that require low-voltage, high-current switching, such as intelligent power switches, motor control, and high-speed switching. Additionally, the device can be used in energy conversion applications, such as in switch-mode power supplies and other similar circuits.
The STD16N60M2 is a reliable and highly efficient device that is capable of delivering consistently superior performance under a variety of conditions. Its advanced PNI technology helps to improve its efficiency and reduce power losses. Additionally, its high current capability and low on-state resistance make it ideal for use in a variety of applications, from industrial to automotive.
The specific data is subject to PDF, and the above content is for reference
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STD16N60M2 Datasheet/PDF