STD16N60M2 Allicdata Electronics

STD16N60M2 Discrete Semiconductor Products

Allicdata Part #:

497-15461-2-ND

Manufacturer Part#:

STD16N60M2

Price: $ 0.33
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 12A DPAK
More Detail: N-Channel 600V 12A (Tc) 110W (Tc) Surface Mount DP...
DataSheet: STD16N60M2 datasheetSTD16N60M2 Datasheet/PDF
Quantity: 1000
1 +: $ 0.33000
10 +: $ 0.32010
100 +: $ 0.31350
1000 +: $ 0.30690
10000 +: $ 0.29700
Stock 1000Can Ship Immediately
$ 0.33
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Series: MDmesh™ M2
Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD16N60M2, also known officially as a PowerMESH MOSFET, is a highly efficient, low-voltage, single-channel MOSFET. The device is designed to function optimally under a variety of conditions, from industrial to automotive applications. It features high current capability, low on-state resistance and low capacitance, enabling it to deliver superior performance in a wide range of power management applications. It is ideal for use in a number of applications, including power switches, high-speed switching, motor control and energy conversion.

The STD16N60M2 is a three-terminal, lateral-type MOSFET. The drain and source terminals form one side of the device, while the gate terminal forms the other side. When the device is off, the drain and source terminals are isolated, and the gate terminal is held at a slightly positive voltage relative to the drain and source terminals, preventing any current from flowing through the device. When a positive voltage is applied between the gate and the source terminals, it causes the output resistance of the device to decrease, allowing current to flow between the drain and source terminals.

The STD16N60M2 also features advanced parasitic n-channel inhibiting (PNI) technology, which helps to reduce the risk of critical latch-up by providing enhanced protection for both the drain and source terminals. PNI also helps to significantly reduce power losses in the device and improve efficiency. Additionally, the device is designed to withstand high levels of operation stress and can handle adverse ESD situations without suffering damage.

The STD16N60M2 is ideally suited for a wide range of applications and fields, such as in industrial and automotive applications. It can be used in applications that require low-voltage, high-current switching, such as intelligent power switches, motor control, and high-speed switching. Additionally, the device can be used in energy conversion applications, such as in switch-mode power supplies and other similar circuits.

The STD16N60M2 is a reliable and highly efficient device that is capable of delivering consistently superior performance under a variety of conditions. Its advanced PNI technology helps to improve its efficiency and reduce power losses. Additionally, its high current capability and low on-state resistance make it ideal for use in a variety of applications, from industrial to automotive.

The specific data is subject to PDF, and the above content is for reference

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