| Allicdata Part #: | 497-4329-2-ND |
| Manufacturer Part#: |
STD16NF06LT4 |
| Price: | $ 0.36 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 60V 24A DPAK |
| More Detail: | N-Channel 60V 24A (Tc) 40W (Tc) Surface Mount DPAK |
| DataSheet: | STD16NF06LT4 Datasheet/PDF |
| Quantity: | 1 |
| 1 +: | $ 0.36000 |
| 10 +: | $ 0.34920 |
| 100 +: | $ 0.34200 |
| 1000 +: | $ 0.33480 |
| 10000 +: | $ 0.32400 |
Specifications
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 40W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 370pF @ 25V |
| Vgs (Max): | ±18V |
| Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 5V |
| Series: | STripFET™ II |
| Rds On (Max) @ Id, Vgs: | 70 mOhm @ 8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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Application Field and Working Principle of STD16NF06LT4
The STD16NF06LT4 is an advanced insulated gate field-effect transistor (IGFET) from STMicroelectronics. This device is designed with nanotechnology and can be used in many kitchen and home appliances and applications. It is a single-channel device and has all the characteristics that a high-performance device needs for industrial control applications, such as power control and voltage regulation.The STD16NF06LT4 is produced by STMicroelectronics and is a single-channel insulated gate field-effect transistor (IGFET). This device provides a single channel of low-voltage operation and is designed with a very low on-state resistance (2.7 mΩ max RDS(on)). It has a maximum total gate charge of 12 nC, a maximum drain-source On-state resistance of 2.7 mΩ, and a channel-to-drain voltage rating of 20 V.The operating temperature range of the device is between -55°C and 125°C, while the maximum avalanche energy is 250 nJ. It is suitable for both hand-held and dedicated applications, such as automotive, industrial and home appliances. It has a maximum switching frequency of 7 MHz and a soft-start current of 75 µA.The main features of the device make it suitable for a wide range of applications, such as AC/DC motor control; heating, ventilation, and air conditioning (HVAC) systems; power line communication (PLC) systems; switch mode power supplies (SMPS); automotive; security systems; lighting systems; and computer power management.The most important feature of this device is its low voltage operation. It can switch with a minimum input voltage of 4.5V, making it very suitable for low voltage applications such as microcontroller-based systems. The device also offers a very economical solution as it is designed using advanced nanotechnology that significantly reduces its cost.The basic working principle of the device is utilizing electrons travelling through the gate insulator. When a sufficient voltage is applied, the electrons tunnel through the insulator and flow through to the channel. This creates an electric field, which in turn modulates the channel conductivity, allowing current to flow.In summary, the STD16NF06LT4 is a sophisticated insulated gate field-effect transistor from STMicroelectronics. It is designed with a low voltage operation and with its advanced nanotechnology, it is an ideal choice for applications such as power control, voltage regulation, and many other industrial control applications. The device is known for its excellent performance and low-power consumption, making it an ideal choice for low-power applications.The specific data is subject to PDF, and the above content is for reference
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STD16NF06LT4 Datasheet/PDF