Allicdata Part #: | 497-17307-2-ND |
Manufacturer Part#: |
STD170N4F7AG |
Price: | $ 0.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CHANNEL 40V 80A DPAK |
More Detail: | N-Channel 40V 80A (Tc) 172W (Tc) Surface Mount DPA... |
DataSheet: | STD170N4F7AG Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.47165 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 172W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4350pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Series: | Automotive, AEC-Q101, STripFET™ |
Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STD170N4F7AG is a silicon-based Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) designed to improve switching performance and efficiency of power conversion applications. It is a single MOSFET with a high Performance HEXFET Technology (PHEXFET) structure and an extended range of operating temperature from -55 to 175 °C. Due to its silicon-based construction, the STD170N4F7AG offers superior electrical characteristics, better power performance, and superior temperature operating range.
The STD170N4F7AG has a wide variety of applications in power management and power conversion, such as cell phone chargers and LED lighting systems. Moreover, it is suitable for use in consumer electronics and other higher power applications. It offers excellent FET performance that helps reduce on-resistance, thereby reducing power consumption and improving overall efficiency.
The main working principle of the STD170N4F7AG is to act as a switch. When a voltage is applied to the drain terminal, it creates an electric field between the drain and source terminals. This causes electrons to flow through the device (channel) from the source to the drain terminals. The gate terminal is used to control the flow of electrons. When the gate terminal is given a positive voltage, the channel is opened and electrons can flow from the source to the drain terminals. When the gate terminal is given a negative voltage, the channel is closed, which prevents the electrons from flowing. This is how the STD170N4F7AG acts as a switch.
Overall, the STD170N4F7AG is a silicon-based MOSFET designed to improve switching performance and efficiency of power conversion applications. It offers excellent FET performance that helps reduce on-resistance and overall power consumption, while making power management and conversion applications more efficient. It has a wide variety of applications and is suitable for use in consumer electronics and other higher power applications. Its working principle revolves around its ability to act as a switch, which is controlled by the gate terminal.
The specific data is subject to PDF, and the above content is for reference
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