Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	321pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	3.7nC @ 4.5V
Series:	Automotive, AEC-Q101, STripFET™
Rds On (Max) @ Id, Vgs:	33 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	10A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The STD19N3LLH6AG is a surface mount low-voltage MOSFET (metal-oxide semiconductor field-effect transistor) produced by STMicroelectronics, a leading global supplier of semiconductor products. The device is built with STMicroelectronics\' advanced PowerTrench MOSFET technology, which provides superior performance and reliability. The STD19N3LLH6AG is capable of withstanding high-current pulses and offers a wide range of operational characteristics. The device benefits from the combination of a low RDS (on), fast switching speed, and low gate charge, making it suitable for a wide range of applications in power management, motor control and power switching.

Application Field

The STD19N3LLH6AG is a versatile device, suitable for a wide range of applications in power management, motor control, and power switching. It is primarily used as a switching element due to its fast switching speed, low RDS (on) and low gate charge. In digital circuits, the STD19N3LLH6AG can be used as an digital-to-analog converter (DAC), in which case the device is used to adjust the output voltage. The STD19N3LLH6AG is also used to control the speed of Brushless DC (BLDC) motors, as it provides an extensive range of operational characteristics. In addition, this device can also be used to control the current in integrated circuits and other systems.

Working Principle

A MOSFET is a three-terminal device consisting of a source, a drain and a gate. When a voltage is applied to the gate, a channel is formed between the source and drain, the size and current-carrying capacity of the channel being determined by the gate voltage. The gate voltage controls the operating point of the source and drain, and also the amount of current that is passed, which is what makes the device suitable for switching and power control applications.The STD19N3LLH6AG is a voltage-controlled MOSFET, meaning that the current passing through the source-to-drain channel is determined by the voltage applied to the gate. When a positive voltage is applied to the gate (Vgs), the current carries through the channel and the device is in the On-state. Conversely, when the gate voltage is reduced to zero (Vgs=0V), or a negative voltage is applied, the device is in the Off-state and no current is passed through the device.By controlling the gate voltage, the STD19N3LLH6AG can be used to control the current and power of devices, making it suitable for a range of applications.

Summary

The STD19N3LLH6AG is a surface mount low-voltage MOSFET built with STMicroelectronics\' advanced PowerTrench MOSFET technology. It is suitable for a wide range of applications in power management, motor control and power switching, due to its fast switching speed, low RDS (on) and low gate charge. The device is a voltage-controlled MOSFET, meaning that the current passing through the source-to-drain channel is determined by the voltage applied to the gate. By controlling the gate voltage, the STD19N3LLH6AG can be used to control the current and power of devices, making it suitable for a range of applications.

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