STD18NF25

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The STD18NF25 is a N-channel enhancement mode field effect transistor incorporated in a TSSOP-8 package and manufactured by STMicroelectronics. It is a small and fast switching device providing very low R_DS(on) and gate charge characteristics and being designed for use in industrial and automotive applications. It is optimized for off-state drain-source breakdown voltage from 10V to 25V and low R_DS(on) featuring a maximum of 0.45Ω. In addition, the integrated Schottky diode minimizes switching losses. The range and choice of package configurations make it suitable for a broad range of designs including DC-DC converters and automated control.

Applications

The STD18NF25 is suitable for use in a variety of DC-DC conversion applications as well as motor control, battery managements systems, industrial and automotive applications. Examples of applications include:

• DC-DC converters;
• Motor control;
• Battery managements systems;
• Industrial applications;
• Automotive applications.

Working Principle

A field effect transistor (FET) is basically a voltage-controlled device with its output current controlled by the input voltage. This makes its operation quite different from a BJT, which uses current to control current. FETs are considered digital-oriented devices because of their ability to switch between two or more states. FETs work by inducing an electric field in a semiconductor material which modulates the conductivity of the material. A FET is basically a voltage-controlled device with its output current controlled by the input voltage.

The STD18NF25 works as follows: an input voltage difference is applied to the gate, causing a reverse electric field to appear along the length of the channel. The FET is in an \'on\' condition when the voltage on the gate is sufficient to overcome the reverse bias of the channel (by exceeding the threshold voltage). When this happens, a channel is created along the length of the FET and current can flow from the source to the drain. Similarly, when the voltage on the gate drops below the threshold voltage, the channel is blocked, and no current can flow from the source to the drain. This effectively switches the FET \'off\' and no current flows.

Since the STD18NF25 FET is an N-channel device, the drain is connected to the most positive potential, while the source is connected to the most negative potential. The gate of the FET is connected to a control voltage and the body is typically connected to ground. The gate-source voltage can be varied to control the drain current. When the gate voltage is negative enough, the drain current is cut off, allowing the device to act as a switch or a linear amplifier.

In summary, the STD18NF25 is optimized for off-state drain-source breakdown voltage from 10V to 25V and low R_DS(on) featuring a maximum of 0.45Ω. An integrated Schottky diode minimizes switching losses. It is suitable for a broad range of applications, such as DC-DC converters, motor control, battery managements systems, industrial and automotive applications.

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