STD1NK80ZT4 Allicdata Electronics
Allicdata Part #:

497-4751-2-ND

Manufacturer Part#:

STD1NK80ZT4

Price: $ 0.23
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 800V 1A DPAK
More Detail: N-Channel 800V 1A (Tc) 45W (Tc) Surface Mount DPAK
DataSheet: STD1NK80ZT4 datasheetSTD1NK80ZT4 Datasheet/PDF
Quantity: 22500
1 +: $ 0.23200
10 +: $ 0.22504
100 +: $ 0.22040
1000 +: $ 0.21576
10000 +: $ 0.20880
Stock 22500Can Ship Immediately
$ 0.23
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 16 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STD1NK80ZT4 is a high performance field-effect transistor (FET) with a wide variety of applications. The device features a low on-resistance, high input and output capacitance, and a low power consumption. It is ideal for switching applications in both industrial and consumer electronics products, as well as for power amplification, audio and digital signal processing, and other analog/mixed-signal applications.

The most important factor in determining performance of the FET is its working principle. FETs are devices in which the flow of current is regulated by an electric field. This electric field is created by applying a positive voltage to the gate terminal of the FET. When this voltage is increased, the electric field increases, causing the channel resistance of the FET to decrease and thus allowing current to flow through the FET. When the gate voltage is decreased, the electric field decreases and the channel resistance increases, blocking current from flowing.

As a high power FET, the STD1NK80ZT4 is ideally suited for power amplifying applications. Due to its low on-resistance, the device can handle high current, making it ideal for high-power switching and amplifying applications in consumer electronics products such as TVs, DVD players and other audio/video equipment. This FET also offers excellent low-noise performance, making it suitable for applications such as digital signal processing and other analog/mixed-signal design. It also allows for improved thermal management due to its low thermal resistance.

The STD1NK80ZT4 is also used in industrial applications, such as relays and low-power switching applications. It is a good choice for use in motor control, power supplies and other power applications. Due to its high input and output capacitance, it provides the necessary electrical insulation against EMI and other interference while providing excellent low-noise performance.

The STD1NK80ZT4 is also widely used in automotive applications. Its low on-resistance makes it suitable for use as a switching device in ignition systems, fuel pumps, and other automotive electrical systems. Its low power consumption allows for increased fuel efficiency, as well as improved thermal management. In addition, its high input and output capacitance allows for improved noise immunity, making it a good choice for automotive applications.

As a high performance, low power FET, the STD1NK80ZT4 is a great choice for many industrial and consumer applications. It is an ideal choice for use in power amplifying and switching applications, as well as digital signal processing and other analog/mixed-signal designs. Its low on-resistance, high input and output capacitance, and low power consumption make it a good choice for automotive and many other high-power applications.

The specific data is subject to PDF, and the above content is for reference

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