STD1NK60-1 Allicdata Electronics
Allicdata Part #:

497-12782-5-ND

Manufacturer Part#:

STD1NK60-1

Price: $ 0.74
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 1A IPAK
More Detail: N-Channel 600V 1A (Tc) 30W (Tc) Through Hole I-PAK
DataSheet: STD1NK60-1 datasheetSTD1NK60-1 Datasheet/PDF
Quantity: 2833
1 +: $ 0.74000
10 +: $ 0.71780
100 +: $ 0.70300
1000 +: $ 0.68820
10000 +: $ 0.66600
Stock 2833Can Ship Immediately
$ 0.74
Specifications
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STD1NK60-1 is a high-speed insulated gate bipolar transistor (IGBT) module capable of switching and controlling currents of up to 600V at frequencies of up to 15kHz. This makes it suitable for use in a variety of applications, including control of heavy machinery and complex electrical systems. The STD1NK60-1 can also be used as a power switch in industrial equipment and higher power circuits.

This IGBT module is a member of Vishay\'s ST family of IGBTs. It is an N channel enhancement mode device with a chip area of 40 square millimeters, which is smaller than the standard sizes, yet it provides the same or better performance. It is capable of operating at increased speed and power, which makes it suitable for complex control tasks.

The STD1NK60-1\'s current capacity makes it suitable for moderately demanding applications, such as controlling induction motors or providing power for heating elements. It is designed to reduce losses in the system, which means it is suitable for applications where power efficiency is a priority. It also features temperature protection, which helps prevent components from overheating or short circuiting.

The STD1NK60-1 is based on a horizontally mounted MOSFET (metal-oxide-semiconductor field effect transistor). It is a three-terminal voltage-controlled device with an insulated gate. When the gate is charged, it allows current to flow through the MOSFET, shutting off the current when the gate is discharged. This makes it suitable for use in high speed switching applications, as well as providing a power switch in industrial equipment.

The STD1NK60-1\'s low on-state voltage drop results in less power consumption and higher efficiency. It also features a low gate drive power supply, making it suitable for use in battery-powered applications. Furthermore, the device has an ESD (electro-static discharge) rating of 8KV, making it resistant to short circuits and surges.

The STD1NK60-1 is commonly used in various industrial applications demanding high-power load switching and control. Some examples include motor control, clock signal switching, and light emitting diode (LED) driving. The device can also be used in photovoltaic (PV) inverters and electric roofing systems, as well as electric vehicles, wind turbines, and variable frequency drives (VFDs).

Overall, the STD1NK60-1 is a reliable and efficient IGBT module suitable for use in various industrial applications. It is capable of withstanding high voltage and currents, can switch and control heavy machinery, and features a low on-state voltage drop. All of these factors make the STD1NK60-1 a great choice for applications requiring a powerful, efficient, and reliable switching solution.

The specific data is subject to PDF, and the above content is for reference

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