
Allicdata Part #: | 497-12782-5-ND |
Manufacturer Part#: |
STD1NK60-1 |
Price: | $ 0.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 1A IPAK |
More Detail: | N-Channel 600V 1A (Tc) 30W (Tc) Through Hole I-PAK |
DataSheet: | ![]() |
Quantity: | 2833 |
1 +: | $ 0.74000 |
10 +: | $ 0.71780 |
100 +: | $ 0.70300 |
1000 +: | $ 0.68820 |
10000 +: | $ 0.66600 |
Vgs(th) (Max) @ Id: | 3.7V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 156pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 8.5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STD1NK60-1 is a high-speed insulated gate bipolar transistor (IGBT) module capable of switching and controlling currents of up to 600V at frequencies of up to 15kHz. This makes it suitable for use in a variety of applications, including control of heavy machinery and complex electrical systems. The STD1NK60-1 can also be used as a power switch in industrial equipment and higher power circuits.
This IGBT module is a member of Vishay\'s ST family of IGBTs. It is an N channel enhancement mode device with a chip area of 40 square millimeters, which is smaller than the standard sizes, yet it provides the same or better performance. It is capable of operating at increased speed and power, which makes it suitable for complex control tasks.
The STD1NK60-1\'s current capacity makes it suitable for moderately demanding applications, such as controlling induction motors or providing power for heating elements. It is designed to reduce losses in the system, which means it is suitable for applications where power efficiency is a priority. It also features temperature protection, which helps prevent components from overheating or short circuiting.
The STD1NK60-1 is based on a horizontally mounted MOSFET (metal-oxide-semiconductor field effect transistor). It is a three-terminal voltage-controlled device with an insulated gate. When the gate is charged, it allows current to flow through the MOSFET, shutting off the current when the gate is discharged. This makes it suitable for use in high speed switching applications, as well as providing a power switch in industrial equipment.
The STD1NK60-1\'s low on-state voltage drop results in less power consumption and higher efficiency. It also features a low gate drive power supply, making it suitable for use in battery-powered applications. Furthermore, the device has an ESD (electro-static discharge) rating of 8KV, making it resistant to short circuits and surges.
The STD1NK60-1 is commonly used in various industrial applications demanding high-power load switching and control. Some examples include motor control, clock signal switching, and light emitting diode (LED) driving. The device can also be used in photovoltaic (PV) inverters and electric roofing systems, as well as electric vehicles, wind turbines, and variable frequency drives (VFDs).
Overall, the STD1NK60-1 is a reliable and efficient IGBT module suitable for use in various industrial applications. It is capable of withstanding high voltage and currents, can switch and control heavy machinery, and features a low on-state voltage drop. All of these factors make the STD1NK60-1 a great choice for applications requiring a powerful, efficient, and reliable switching solution.
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STD12Y-A | TE Connectiv... | 0.06 $ | 1000 | MARKER CHEVRON A LEGEND Y... |
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