STD20N20T4 Allicdata Electronics
Allicdata Part #:

497-4330-2-ND

Manufacturer Part#:

STD20N20T4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 200V 18A DPAK
More Detail: N-Channel 200V 18A (Tc) 90W (Tc) Surface Mount DPA...
DataSheet: STD20N20T4 datasheetSTD20N20T4 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: --
Power Dissipation (Max): 90W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 125 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The STD20N20T4 is a single type n-channel enhanced mode power field-effect transistor (FET) designed to be used in switching power supplies, dc-dc converters, servo controls, polarity protection and uninterruptible power supplies. This device is designed to offer an excellent combination of fast switching speed, low gate charge, low on-state resistance and enhanced avalanche capability. The STD20N20T4 is fabricated using advanced epitaxial power MOSFET cell design and is capable of being used in various applications due to its superior logic and drive characteristics.

The STD20N10T4 is constructed using two independent symmetrical N-channel MOSFETs connected in series in a single package. The device has two source leads and two drain leads with gate terminals available for each device. The gate terminals are connected together internally so that only one gate voltage is required for both devices. The source terminals are common and connected to the source pin on the package. The two drain terminals, however, are not connected to each other and each device can be turned off independently, allowing for better flexibility in certain applications.

The working principle of the STD20N10T4 is as follows: when the gate voltage is applied to the gate electrodes, an electric field is formed between the gate and the source terminal which induces carriers (electrons and holes) in the channel region of the device. The electric field also attracts the carriers to the gate electrode, thus creating an inversion layer which modulates the conductance between the source and the drain. This is known as the MOSFET\'s "on state" as it conducts current from drain to source, and dissipates power when a voltage is applied across the source and drain terminals.

The STD20N10T4 has various applications due to its superior logic and drive characteristics, such as in switching power supplies, dc-dc converters, servo controls, polarity protection, and uninterruptible power supplies. It is also used in AC-DC converters and other power control applications. For example, the device is used in UPS systems to protect the load against voltage sags, voltage drops, and transient overvoltage. Other applications include motor control systems, power supplies, and power switches.

The STD20N10T4 is designed to offer an excellent combination of fast switching speed, low gate charge, low on-state resistance, and enhanced avalanche capability. It has superior logic and drive characteristics which make it suitable for various applications ranging from power supply units to servo control systems. It is also capable of dissipating large amounts of power and has a wide voltage range. The device is highly reliable and energy-efficient, making it an ideal choice for applications requiring fast switching speed and low on-state resistance.

The specific data is subject to PDF, and the above content is for reference

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