STD20NF06LT4 Discrete Semiconductor Products |
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Allicdata Part #: | 497-5888-2-ND |
Manufacturer Part#: |
STD20NF06LT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 60V 24A DPAK |
More Detail: | N-Channel 60V 24A (Tc) 60W (Tc) Surface Mount DPAK |
DataSheet: | STD20NF06LT4 Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 25V |
Vgs (Max): | ±18V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STD20NF06LT4 is a type of power field-effect transistor (FET). FETs are transistors that use an electric field to control current or voltage flow. This particular type of power FET is an enhancement-mode N-channel logic level FET, which is one that is designed to operate with a low gate-source voltage while providing improved performance over traditional FETs.
The application field of STD20NF06LT4 is the single-phase and two-phase AC adapter. It is suitable for the current range up to 11A. This power FET enables the customer to reduce derating at elevated temperatures, which allows for a greater design flexibility when using the device.
The working principle of STD20NF06LT4 is that a voltage applied between the source and the gate terminals creates an electric field to control the voltage between source and drain terminals. This electric field creates a junction barrier that is controlled by the gate voltage. The junction barrier affects the current flow between the source and drain terminals.
The power FET is constructed with a die-to-mold interface to ensure excellent thermal performance and reliability. It features a low on-resistance and a low gate charge, which helps reduce switching losses. Additionally, it has improved EMI/RFI noise immunity and is designed to reduce power dissipation.
The STD20NF06LT4 has a maximum drain-source voltage of 20V and drain-source on-state resistance of 0.16 Ohm. This power FET is designed to operate in the temperature range of -55°C to +150°C. It has a low gate threshold voltage of 1.7V and can also handle high peak currents of 57A.
Overall, the STD20NF06LT4 is a great choice for single-phase and two-phase AC adapter applications. It has great thermal performance and reliability due to its die-to-mold interface and it also has low on-resistance and gate charge, along with improved EMI/RFI noise immunity. With a maximum drain-source voltage of 20V and drain-source on-state resistance of 0.16 Ohm, the STD20NF06LT4 delivers excellent performance.
The specific data is subject to PDF, and the above content is for reference
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