STD20NF06LT4 Allicdata Electronics

STD20NF06LT4 Discrete Semiconductor Products

Allicdata Part #:

497-5888-2-ND

Manufacturer Part#:

STD20NF06LT4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 60V 24A DPAK
More Detail: N-Channel 60V 24A (Tc) 60W (Tc) Surface Mount DPAK
DataSheet: STD20NF06LT4 datasheetSTD20NF06LT4 Datasheet/PDF
Quantity: 2500
Stock 2500Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Vgs (Max): ±18V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 40 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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STD20NF06LT4 is a type of power field-effect transistor (FET). FETs are transistors that use an electric field to control current or voltage flow. This particular type of power FET is an enhancement-mode N-channel logic level FET, which is one that is designed to operate with a low gate-source voltage while providing improved performance over traditional FETs.

The application field of STD20NF06LT4 is the single-phase and two-phase AC adapter. It is suitable for the current range up to 11A. This power FET enables the customer to reduce derating at elevated temperatures, which allows for a greater design flexibility when using the device.

The working principle of STD20NF06LT4 is that a voltage applied between the source and the gate terminals creates an electric field to control the voltage between source and drain terminals. This electric field creates a junction barrier that is controlled by the gate voltage. The junction barrier affects the current flow between the source and drain terminals.

The power FET is constructed with a die-to-mold interface to ensure excellent thermal performance and reliability. It features a low on-resistance and a low gate charge, which helps reduce switching losses. Additionally, it has improved EMI/RFI noise immunity and is designed to reduce power dissipation.

The STD20NF06LT4 has a maximum drain-source voltage of 20V and drain-source on-state resistance of 0.16 Ohm. This power FET is designed to operate in the temperature range of -55°C to +150°C. It has a low gate threshold voltage of 1.7V and can also handle high peak currents of 57A.

Overall, the STD20NF06LT4 is a great choice for single-phase and two-phase AC adapter applications. It has great thermal performance and reliability due to its die-to-mold interface and it also has low on-resistance and gate charge, along with improved EMI/RFI noise immunity. With a maximum drain-source voltage of 20V and drain-source on-state resistance of 0.16 Ohm, the STD20NF06LT4 delivers excellent performance.

The specific data is subject to PDF, and the above content is for reference

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