Allicdata Part #: | 497-3156-2-ND |
Manufacturer Part#: |
STD25NF10LT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 100V 25A DPAK |
More Detail: | N-Channel 100V 25A (Tc) 100W (Tc) Surface Mount DP... |
DataSheet: | STD25NF10LT4 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1710pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 5V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 12.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STD25NF10LT4 is an n-channel enhancement mode Field-Effect Transistor (FET) commonly employed in applications such as portable radios and audio equipment. It is a part of the popular ST series of FETs with a maximum dissipation rating of 25W and a VDS voltage rating of 10V. FETs are a type of semiconductor, which means that it can control and switch voltages without the use of a separate power source, making them highly efficient. The FET\'s transistor, or silicon, is the core component of the device and is what allows electricity to flow from the source to the output.An N-channel FET works through the application of an electric field. This electric field can be thought of as a "gate" which acts to both block off and allow electricity to pass through. The voltage that is applied to this gate is what governs the behavior of the device. When the gate voltage is low, the FET is in its "off state" -- blocking off the current, and essentially "off". When the gate voltage is increased, the FET is switched to its "on" state, and current is allowed to pass through.The STD25NF10LT4 is composed of a drain, a source, and a gate. When the device is connected to a power source, it may behave in either its "on" or "off" state, depending on the voltage applied to the gate terminal. When the gate voltage is low, the device behaves as if the gate were shorted to the source and the drain is off, preventing current from flowing. When the gate voltage is higher, the device behaves as if the gate were open, and the drain is on, allowing current to pass.The main advantage of the STD25NF10LT4 is its power rating. With a maximum dissipation rating of up to 25W, the device can handle higher amounts of power flow than most other FETs on the market. Additionally, the STD25NF10LT4\'s low threshold voltage allows it to operate at a low voltage, making it ideal for battery powered applications.The STD25NF10LT4 is used in a variety of applications, primarily in communication circuits, audio equipment, and portable radios. Its low threshold voltage makes it ideal for power-saving devices such as cell phones, portable music players, and other battery operated devices. The device can also be used in audio amplifiers, pre-amplifiers, and other audio communication systems. The FET\'s enhanced switching speed and low gate capacitance make it ideal for high-frequency applications such as digital signal processing and frequency synthesis.Overall, the STD25NF10LT4 is a highly efficient and reliable FET that is suitable for a wide range of applications in audio and communication circuits. Its low threshold voltage and high power rating make it highly sought-after in the field of semiconductor devices, making it an essential tool in any electronics technician\'s toolkit.
The specific data is subject to PDF, and the above content is for reference
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