STD28P3LLH6AG

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STD28P3LLH6AG is a P-channel, low-voltage, power MOSFET that can handle an enormous amount of load current. Developed by STMicroelectronics, the STD28P3LLH6AG has an incredibly low resistance on the drain-source channel (Rdson), enabling it to operate at high frequencies and high temperatures. The device is made from a junction isolated high-performance trench process, further maximizing the efficiency and heat dissipation capabilities of the package.

The STD28P3LLH6AG offers a variety of advantages that make it well-suited for various applications. It’s rated for usage across a wide temperature range and a voltage range of -25V to -30V. It’s also highly efficient, allowing for a higher power density with far lower losses than other power MOSFETs of the same size. Additionally, the device’s stable operating temperature resistance means it can work in high temperature situations without degrading.

However, the STD28P3LLH6AG isn’t just efficient and heat-resistant – it’s also incredibly durable. Its resistance to thermal stress, combined with its voltage and current carrying capacity make it incredibly reliable. It also offers reverse blocking, meaning it can block current from the drain to the source when the voltage on the drain exceeds that of the source. This makes it appropriate for a range of motor control and high-power applications.

The STD28P3LLH6AG also offers a wide range of features to suit a variety of applications, including a variety of packaging options, a Body Diode and Flyback Prevention mechanism to limit ringing,as well as over-current and over-temperature protection.

The STD28P3LLH6AG’s working principle is based on the drift field effect. It works in a manner similar to the operation of other MOSFETs, but uses a different type of gate electrode and an additional electrode to achieve its high drain current capabilities. The gate electrode is located adjacent to the source and has an insulated gate, while the additional electrode is in the vicinity of the drain and is also referred to as the body electrode. When a voltage is applied to the gate, it enables current to flow between the source and the drain. This is because the gate voltage causes the body electrode to attract free electrons to the neutral interface between the gate and the drain-source channel, enabling channels of charge carriers, or ‘drift’, to form. The current flowing between the source and the drain is therefore proportional to the magnitude of the gate voltage.

The STD28P3LLH6AG is designed for usage in a variety of motor control and power applications, such as motor drives, variable frequency drives, off-board chargers, power supplies, and power conversion applications. It is also suited for a range of other high-power applications where low-voltage operation and superior thermal transient performance are necessary. Thanks to its various features and efficient operation, the STD28P3LLH6AG provides reliable control and operation over a wide range of applications.

The specific data is subject to PDF, and the above content is for reference