STD2NK100Z Allicdata Electronics
Allicdata Part #:

497-7964-2-ND

Manufacturer Part#:

STD2NK100Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 1000V 1.85A DPAK
More Detail: N-Channel 1000V 1.85A (Tc) 70W (Tc) Surface Mount ...
DataSheet: STD2NK100Z datasheetSTD2NK100Z Datasheet/PDF
Quantity: 2500
Stock 2500Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 70W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 499pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 900mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD2NK100Z is a single type of field-effect transistor (FET) that has many useful applications and a simple yet effective working principle. It is commonly utilized in the areas of communications and consumer electronics, where a reliable and efficient small signal path is needed.

The STD2NK100Z is a general purpose N-channel depletion mode MOSFET that is designed to provide high current levels at low voltages. It has a drain-source breakdown voltage rating of 100 V and a 20 A maximum drain current. It is also capable of providing a very low on-resistance rating of 0.8 Ohm, making it suitable for switching applications. The low on-resistance rating allows for very fast switching between high and low states.

The STD2NK100Z is typically used in the signal path of consumer electronics applications. This includes everything from mobile phones and tablets to audio signal distribution in cars and home audio systems. It is also used for signal switching in many communication devices. This includes switches, routers, and base stations. The low on-resistance and fast switching capability of the STD2NK100Z make it ideal for high speed signal switching and signal routing applications.

The working principle behind the STD2NK100Z is relatively simple. The gate of the FET is connected to a voltage source which controls the conduction between the drain and source. When the gate voltage is greater than the drain-source voltage, the FET is on and current flows from the drain to the source. When the gate voltage is less than the drain-source voltage, the FET is off and no current flows.

A key advantage of the STD2NK100Z FET is its ability to switch quickly. This allows the device to respond to fast changing signals with minimal distortion. The FET’s low on-resistance rating also contributes to its fast switching capabilities. Additionally, the FET has an excellent immunity to electrostatic discharge (ESD) which helps to protect the device from damage when operating in environments with high levels of static electricity.

The STD2NK100Z is a reliable, efficient, and low cost FET that is ideal for many consumer electronics and communications applications. Its low on-resistance and fast switching capabilities make it well suited for high speed signal routing, switching, and amplification circuits. Additionally, the device has excellent ESD immunity and a long life span, making it suitable for long term use in any application.

The specific data is subject to PDF, and the above content is for reference

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