
Allicdata Part #: | 497-12783-5-ND |
Manufacturer Part#: |
STD2HNK60Z-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 2A IPAK |
More Detail: | N-Channel 600V 2A (Tc) 45W (Tc) Through Hole I-PAK |
DataSheet: | ![]() |
Quantity: | 6099 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 280pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 4.8 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STD2HNK60Z-1 is a high-performance, low-voltage enhancement mode enhancement type MOSFET, which is suitable for both low-power synchronous rectifier and switch-mode power supplies applications.
The device is characterized by low on-state resistance, low gate charge, fast switching speed, low device-dissipation and breakdown voltage that can handle load up 1.6A. This device is an ideal solution for power supply conversion and switching applications, such as rectifiers, dc-dc converters and inverters.
The working principle of the STD2HNK60Z-1 is fairly simple. The device consists of two source terminals, labeled source1 and source2, a drain terminal and a gate terminal. When a voltage is applied to the gate terminal, it creates an inversion region in the MOSFET channel near the drain side. This creates an attractive force between the electron and hole density in the channel, enabling current to flow between the two source terminals, through the drain and back to the source2 terminal.
The device is designed with a built-in Zener diode that acts as a clamp, preventing the MOSFET from overdriving and providing protection in the event of a short circuit. The MOSFET also has a diode connected to the drain terminal and will cut off any current flow if the drain voltage rises above the source voltage.
The STD2HNK60Z-1 MOSFET is ideal for applications that require low on-resistance and high switching speeds. It is also suitable for low-power synchronous rectifiers and switch-mode power supplies. The device is capable of safely handling large currents up to 1.6A, and its low gate charge and low-voltage breakdown make it suitable for a variety of applications. Some of the main applications for these MOSFETs are power supply topologies, AC Motor control, PWM speed control, DC-DC converter control, switching regulator control and electrode pre-heat control.
The STD2HNK60Z-1 also has some additional features that make it even more versatile. For example, its output is inverted, meaning it can be used as a low-side switch, in addition to a high-side switch. It also has a thermal shutdown feature that prevents it from operating in high temperatures and a low gate voltage rating of 4V which makes it ideal for use in low voltage systems.
In conclusion, the STD2HNK60Z-1 is an excellent choice for a wide variety of applications, due to its low on-state resistance, fast switching speed, low device-dissipation and excellent thermal shutdown features. The device is perfect for applications such as power supply conversion, rectifiers, DC-DC converters, inverters, motor control, and PWM speed control. The device is also highly robust, and is capable of safely handling currents up to 1.6A.
The specific data is subject to PDF, and the above content is for reference
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