Allicdata Part #: | 497-12554-5-ND |
Manufacturer Part#: |
STD2NC45-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 450V 1.5A IPAK |
More Detail: | N-Channel 450V 1.5A (Tc) 30W (Tc) Through Hole I-P... |
DataSheet: | STD2NC45-1 Datasheet/PDF |
Quantity: | 1302 |
Vgs(th) (Max) @ Id: | 3.7V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 160pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 4.5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Tc) |
Drain to Source Voltage (Vdss): | 450V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STD2NC45-1 is a single enhancement-mode 3-Pin N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor) that can be used in high-speed, low-side switching applications. It is generally used in place of standard power transistors due to its unique advantages, such as low on-state resistance and high-speed switching performance. The STD2NC45-1 has an on-state resistance of 4.5 ohms and an off-state leakage of 150.0 nA.
Application Field
The STD2NC45-1 is ideal for high-speed, low-side switching applications such as switch-mode power supplies, DC-to-DC converters, dc-dc converters and inverters. Additionally, it can be used in automotive, industrial, power management, amplifier, and communications circuits. Thanks to its low on-state resistance and high-speed switching performance, the STD2NC45-1 is often used for load switch applications.
Working Principle
The STD2NC45-1 is a 3-pin N-channel MOSFET that uses a gate to control the flow of electrons. The way that it works is fairly simple, but it can be difficult to understand at first. Basically, the gate is used to either let electrons move through, or to block them. To turn ON the STD2NC45-1, a positive voltage is applied to the gate. This attracts electrons and allows them to flow through. To turn it OFF, the negative voltage is applied, which repels electrons and prevents them from moving. The amount of current that is allowed to flow through the gate is determined by the gate-source voltage and the on-state resistance of the device.
The STD2NC45-1 is designed to handle high-power applications. It has a drain-source voltage of 30V and a drain-source current of 20A. The device also features a maximum drain-source resistance of 4.5 ohms, which allows it to handle high power input without drawing too much current. The integrated circuit also features an off-state leakage current of 150.0 nA, which allows it to handle digital signals more efficiently.
Conclusion
Overall, the STD2NC45-1 is a versatile, high-performance 3-Pin N-Channel MOSFET that can handle high-power, low-side switching applications. Thanks to its low on-state resistance and high-speed switching performance, the device is ideal for applications such as switch-mode power supplies, DC-to-DC converters, dc-dc converters, and inverters. The STD2NC45-1 is also designed to handle digital signals with an off-state leakage current of 150.0 nA.
The specific data is subject to PDF, and the above content is for reference
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