STD2N80K5

The STD2N80K5 is a 200V N- Channel enhancement mode Field Effect Transistor (FET). It is a dual-die product comprising of a FET part in one die and a temperature sensor in the other die. This device is popularly used in a wide range of applications such as Automotive and Power Management.

FETs like the STD2N80K5 operate by using an electric field to modify their conductivity of the channel between their source and drain terminals.

In order to understand the working principle of the STD2N80K5, it’s important to first understand the different regions of its characteristics.

First, we need to understand its ON region. The ON region is where the FET switches to a high-conductance state and is typically determined by the amount of voltage that is applied across its gate and source terminals. When the gate-source voltage is below the threshold value, normally 2 V to 4 V, the FET is in the OFF region.

In the ON region, the FET is in a low-conductance state and is determined by the gate-source voltage that is applied. At this stage, the FET is acting as a resistor, limiting the current flow from source to drain. This leads to the second region, called the Saturation Region.

The Saturation Region is where the FET switches to a high-conductance state and is determined by a low gate-source voltage. The low gate-source voltage causes the FET to open and allows an unrestricted flow of current from source to drain. This is when the FET acts as a switch and cannot be used as a resistor.

The last region is the cutoff region. The cutoff region is determined by the gate-source voltage that is applied. At this stage, the FET is in a high-resistance state. The amount of current that passes through the FET is very small. This region is typically used to protect devices that are connected to the FET’s drain terminal.

When the STD2N80K5 is used for switching applications, it is important to understand the reverse recovery time. This is the time that it takes for the charge carriers to move from the drain to the source terminal. This time can vary from device to device and must be taken into consideration when designing circuits.

The STD2N80K5 has a unique feature, which is the die temperature sensor. This allows the device to sense and monitor its own temperature. This is useful for power management applications as it can prevent the device from overheating, which can cause damage.

In summary, the STD2N80K5 is a 200V N-Channel enhancement mode FET. It is ideal for switching applications, owing to its low gate-source voltage requirements and high conductance in its ON and SAT regions. It is also equipped with a die temperature sensor, allowing it to monitor its own temperature, making it a suitable choice for power management applications.