Allicdata Part #: | 497-15271-5-ND |
Manufacturer Part#: |
STF7N105K5 |
Price: | $ 2.45 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 1050V 4A TO220FP |
More Detail: | N-Channel 1050V 4A (Tc) 25W (Tc) Through Hole TO-2... |
DataSheet: | STF7N105K5 Datasheet/PDF |
Quantity: | 411 |
1 +: | $ 2.23020 |
50 +: | $ 1.79311 |
100 +: | $ 1.63378 |
500 +: | $ 1.32294 |
1000 +: | $ 1.11573 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 380pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | SuperMESH5™ |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 1050V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STF7N105K5 is an N-channel enhancement-mode MOSFET (a type of Field Effect Transistor). It can be used to amplify electrical signals or act as an electronically-controlled switch in a line circuit or on a printed circuit board. It is one of the most commonly used transistors for these applications, because it has good power handling characteristics, low quiescent current, high input impedance, and fast switching time.
The main application field for this device is in power management and electrical signal amplification, as well as for switching circuits. In particular, it is commonly used in power converters (DC-DC, AC-DC) as a main switch, and in audio amplifiers and pre-amplifiers as a signal gain control. It can also be used in power supplies and as a light switch.
Working Principle
At the heart of this MOSFET is a gate that acts as an electric switch. When a small positive voltage is applied to the gate, an electric field is created that causes electrons to flow from the drain to the source, turning the device on and allowing current to flow. When the gate voltage is switched off, the electric field is reduced, causing the electrons to stop flowing and the device to turn off. The magnitude of the voltage required to switch the device on and off is known as the ‘threshold voltage’, and is typically about 1.5V for the STF7N105K5.
The gate is typically connected to another signal source (such as a microcontroller or logic gate) that controls the on/off signal, allowing the transistor to act as an electronically-controlled switch. The output signal from the drain can be adjusted by connecting the gate to different signal sources and varying the amount of voltage that is applied.
The STF7N105K5 provides high input impedance, fast switching time, and low static power consumption. It has an RDS(on) of 10 ohms, a maximum VGS(th) of -1.0V, a maximum PARD of 39@25A, a maximum Ptot of 110W, and a maximum junction temperature of 175°C.It is also available in a wide range of packages, including TO-220, D2PAK, SOT-223, and SOT-89.
In conclusion, the STF7N105K5 is a versatile N-channel MOSFET that is suitable for use in a wide range of applications, from power conversion to signal amplification. It offers high input impedance, low static power consumption, and fast switching time. It is available in a variety of packages and can be used as an electronically-controlled switch in a line circuit or on a printed circuit board.
The specific data is subject to PDF, and the above content is for reference
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