STF7N90K5

Rds On (Max) @ Id, Vgs:	--
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Vgs (Max):	±30V
Vgs(th) (Max) @ Id:	5V @ 100µA
Series:	MDmesh™ K5
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	7A (Tc)
Drain to Source Voltage (Vdss):	900V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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STF7N90K5 is a type of field effect transistor (FET) commonly used in various power electronic applications. It is a single-ended transistor that is typically used for switching in applications like motor control, power supply regulation, power amplification, and power conversion.The STF7N90K5 is a linear device that combines two distinct technologies: an electrolytic field-effect transistor (FET) and an oxide-insulated gate-field-effect transistor (IGFET). The FET is essentially two electrodes – a source and a drain – with a gate between them. When a voltage is applied to the gate, the electrode\'s field strength influences the current flowing through the channel between the source and the drain. In contrast, an IGFET is a three-terminal device with a gate that is insulated from the other electrodes by a thin oxide layer. A voltage applied to the gate creates a charge on the oxide\'s surface, allowing current to flow through the channel between the source and the drain.The STF7N90K5 combines the benefits of both FET and IGFET technology to provide superior performance. The insulated gate provides a high input impedance, meaning that less current is drawn from the driving circuit, allowing for better power efficiency. In addition, it has a low output impedance, which means that it can handle higher currents, making it ideal for switching applications. Finally, the FET technology provides a low channel resistance, allowing for high speed operation.The working principle of the STF7N90K5 is relatively straightforward. When a voltage is applied to the gate, a charge accumulates at the oxide gate insulator, which changes the conductivity of the drain and source electrodes. This regulates the current flow through the device, allowing for precise switching control. The gate voltage also controls the depletion region of the device, which is the area between the drain and source where current flows. The width of this depletion region can be adjusted to regulate the amount of current flow, allowing for better control over power usage.In conclusion, the STF7N90K5 is a single-ended field effect transistor (FET) that is ideal for power electronics applications like motor control, power supply regulation, power amplification, and power conversion. It combines the benefits of both FET and oxide-insulated gate-field-effect transistor (IGFET) technology to provide superior performance. A voltage applied to the gate allows for precise current flow control, allowing for high-speed, high-efficient switching.

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