Allicdata Part #: | 497-13597-5-ND |
Manufacturer Part#: |
STF7N80K5 |
Price: | $ 2.42 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N CH 800V 6A TO220FP |
More Detail: | N-Channel 800V 6A (Tc) 25W (Tc) Through Hole TO-22... |
DataSheet: | STF7N80K5 Datasheet/PDF |
Quantity: | 500 |
1 +: | $ 2.19870 |
50 +: | $ 1.77509 |
100 +: | $ 1.59755 |
500 +: | $ 1.24252 |
1000 +: | $ 1.02952 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 360pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 13.4nC @ 10V |
Series: | SuperMESH5™ |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STF7N80K5 is a single, N-Channel, standard drain enhancement mode field effect transistor (FET). It has an advanced trench MOSFET structure and a low gate charge technologies, to optimise performance and cost. The FET is designed for use in applications up to 500V, requiring fast switching such as switch mode power supplies and converters, lighting and motor control.
A FET is a unipolar transistor which can work in two ways - either through enhancement or depletion. The STF7N80K5 FET works in an enhancement mode, meaning that a voltage is applied to the gate of the FET to cause it to turn on.
When the gate is not activated, it acts as an insulator, blocking current flow between its source and drain. When the voltage is applied to the gate, the charge carriers (electrons and holes) are attracted to the gate, causing a conductive channel to form. This conducts the current flowing between the source and the drain. The voltage applied to the gate can control the conductivity of the channel.
The STF7N80K5 FET has an advanced trench MOSFET structure which gives it a really low on-state resistance (Rds(on)) of just 0.008Ω. This low Rds(on) gives it excellent charging and discharging performance, meaning it is great for switching applications. It has a rated drain current of 30A and a drain source voltage (VDS) of 500V.
As well as this low Rds(on), the STF7N80K5 has low gate charge (Qg), reducing the power dissipation and thus the operating temperature of the device. This makes the FET suitable for use in high temperature environments, such as in automotive, industrial and entertainment applications.
The STF7N80K5 can work with a wide range of gate voltages, down to just 5V. This means it can be powered by a low voltage supply, and also allows the device to be driven by logic gates and microprocessors, minimizing power loss and improving performance. The FET also has a very high operating temperature range, from -55°C to 175°C.
The STF7N80K5 is designed for rapid switching applications and is a great choice when high power handling is required. It features an anti-parallel diode for circuit protection, increasing the FET’s durability in switch mode power supplies (SMPS), lighting and motor control applications.
The STF7N80K5 is a great choice for applications where efficient, fast switching is required. With its low Rds(on) and low gate charge, it can handle large currents with minimal power dissipation, making it suitable for use in applications up to 500V. It is also great for use in automotive, industrial and entertainment applications, due to its wide operating temperature range.
The specific data is subject to PDF, and the above content is for reference
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