STF7N52K3

Vgs(th) (Max) @ Id:	4.5V @ 50µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	870pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	33nC @ 10V
Series:	SuperMESH3™
Rds On (Max) @ Id, Vgs:	850 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drain to Source Voltage (Vdss):	525V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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STF7N52K3 Application Field and Working Principle

The STF7N52K3 is a single enhancement mode (normally off) N-channel MOSFET that is designed for use in various electronic applications including fly-back, boost and buck circuits. It is manufactured using Toshiba\'s latest process technology and is packaged in the industry standard TO-220AB package. The device is optimized for use in high current, low voltage switching applications that require an exceptionally low on-resistance, making it ideal for a wide range of power management designs.

Features and Benefits

The STF7N52K3 offers several unique features and benefits, including: •Low on-resistance: the STF7N52K3 has a particularly low on-resistance, making it an ideal choice for applications that require high current and low voltage switches •High efficiency: designed to minimize conduction losses, the STF7N52K3 has a high efficiency and is capable of dissipating large amounts of heat during high current operation •High peak current: the device is capable of carrying a maximum peak current of 32A, making it suitable for a wide range of power management designs •Low gate threshold voltage: the STF7N52K3 has a low gate threshold voltage of 2.5V, enabling it to switch at low voltage levels •Tape-and-reel packing: packaged in industry standard tape-and-reel packing, the STF7N52K3 can be easily integrated into existing production lines •High temperature stability: the device is designed to operate at temperatures up to 150°C, making it ideal for high temperature applications

Application Field

The STF7N52K3 is well suited for use in a variety of electronic applications, including: •DC/DC converters •Power supplies •Switching regulators •Motor control •Lighting control •Solar inverters •Resonant converters •Battery powered designs •DC-AC inverters •UPS

Working Principle

The STF7N52K3 is an enhancement-mode metal-oxide-semiconductor field effect transistor (MOSFET), meaning that it needs an external voltage source (VGS) to reduce the device’s resistance. When VGS is applied, it induces a net positive charge in the gate-source region, resulting in the reduction of the device’s resistance (or drain-source channel). This is the basic principle behind the operation of an MOSFET.When the source is connected to ground and the gate is grounded, the device is turned off. In this state, the MOSFET has an infinite source-drain resistance and no current will flow. When a positive bias is applied to the gate terminal, the body-source junction is reverse-biased, creating an inversion layer which allows for current to flow between the drain and source. The current is controlled by the gate voltage (VGS), with higher voltages allowing for a larger current to flow. The STF7N52K3’s low on-resistance of 9.1 mΩ, low gate threshold voltage of 2.5V, and peak current of 32A make it an ideal choice for a variety of power management designs. Additionally, it’s high energy efficiency and temperature stability make it suitable for a wide range of applications, such as DC/DC converters, motor control, power supplies, and DC-AC inverters.

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