Allicdata Part #: | 497-13949-5-ND |
Manufacturer Part#: |
STF7N60M2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V TO-220FP |
More Detail: | N-Channel 600V 5A (Tc) 20W (Tc) Through Hole TO-22... |
DataSheet: | STF7N60M2 Datasheet/PDF |
Quantity: | 1992 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 271pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 8.8nC @ 10V |
Series: | MDmesh™ II Plus |
Rds On (Max) @ Id, Vgs: | 950 mOhm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STF7N60M2 is a power MOSFET that is designed for use in switching applications over wide temperature range. It is a single N-channel enhancement mode power field-effect transistor that is designed for use in a variety of different applications such as consumer electronics, automobiles and industrial grade applications. This article will discuss the application fields and working principle of STF7N60M2.
The STF7N60M2 is a 700V, 7A, single N-channel power MOSFET that is designed to provide a cost-effective solution for power conversion applications. The device features a low on-resistance and high current capabilities, making it ideal for use in high-current applications. The device has an RDS(ON) of 2.0mΩ, making it suitable for high current and low voltage applications, such as DC-DC converters and motor control.
The STF7N60M2 is most commonly used in high power DC-DC switching applications. It can be used to provide a low-loss, low-noise and high-efficiency switch for power conversion in automotive electronics, consumer electronics and other applications. It can also be used as a low-noise, low-cost switch in industrial grade applications such as motor control and power conditioning.
The design of the STF7N60M2 incorporates a number of features that are designed to provide both reliable switching performance and robust protection against thermal and electrical stress. The device is designed with a temperature-compensated gate drive, which helps to ensure that the device operates accurately over a wide temperature range. It also includes a self-protection delay circuit, which helps to protect the device from over-current and overvoltage situations.
The operating principles of the STF7N60M2 are similar to those of other MOSFETs. It operates in the enhancement mode, which means that when the Gate voltage is below the threshold voltage, the MOSFET is “off” and when the gate voltage is above the threshold, the MOSFET is “on”. When the device is “on”, current can flow from the source to the drain. As the device is switched off, the current flow stops, and when the device is switched back on, current flow is resumed.
The STF7N60M2 is a highly reliable MOSFET transistor that can provide efficient power conversion in a variety of applications. It offers excellent performance over a wide temperature range and its robust design and low on-resistance make it suitable for use in high-current applications. The device also includes a number of protective features to protect against thermal and electrical stress, making it an ideal solution for many power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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