Allicdata Part #: | 497-10570-5-ND |
Manufacturer Part#: |
STF7NM60N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 4.7A TO-220FP |
More Detail: | N-Channel 600V 5A (Tc) 20W (Tc) Through Hole TO-22... |
DataSheet: | STF7NM60N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-5 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 363pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 900 mOhm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Introduction
The STF7NM60N is an N-Channel advanced Power MOSFET offering the benefits of high current capability, low on-resistance and low gate charge. It is primarily used as a power switch and in current-sensing applications such as adjustable DC regulated power supplies, DC-DC converter and high-efficiency DC motor speed control.
Application Field
The STF7NM60N can be used for both high and low-side switching in automotive and industrial application such as motor control, DC-DC conversion, power distribution, lighting control and heating control. Its low on-resistance, low gate charge and fast switching speeds make it an ideal choice for high current applications such as DC motor drive and switching power supplies. It can also be used in LED lighting applications where its low on-resistance and low gate charge will enable efficient operation.
It is also suitable for applications in other industries such as military, aerospace, communications and consumer electronics where its high current capability and low power losses make it an excellent choice.
Working Principle
The STF7NM60N utilizes a N-Channel MOSFET to provide low on-resistance and fast switching speeds, making it an ideal choice for power switching applications. It is constructed using N-type silicon material, which is the most commonly used substrate material in power MOSFETs. It utilizes a floating gate design to reduce the on-resistance and switch the device off more quickly.
The STF7NM60N features a low gate threshold voltage, meaning that the MOSFET can be switched on even with a low voltage applied to the gate. The MOSFET utilizes a vertical design structure which allows for a longer channel and hence a lower on-resistance. This low on-resistance, coupled with the low gate charge makes the device well suited for fast switching applications.
The device also features protection against over-voltage, over-current and electrostatic discharge protection. This makes the STF7NM60N an excellent choice for a wide range of applications where safety is a top priority.
Conclusion
The STF7NM60N is a versatile and powerful N-Channel MOSFET design which is well suited for a wide range of power switching applications. Its low on-resistance, low gate charge and fast switching speeds make it an ideal choice for LED lighting and DC motor control applications, as well as for medical, military and aerospace applications where safety is also a priority.
The specific data is subject to PDF, and the above content is for reference
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