Allicdata Part #: | STF7N60DM2-ND |
Manufacturer Part#: |
STF7N60DM2 |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET |
More Detail: | N-Channel 600V 6A (Tc) 25W (Tc) Through Hole TO-22... |
DataSheet: | STF7N60DM2 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.34993 |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 10V |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 324pF @ 100V |
Vgs (Max): | ±25V |
Series: | MDmesh™ DM2 |
Vgs(th) (Max) @ Id: | 4.75V @ 250µA |
Rds On (Max) @ Id, Vgs: | 900 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The STF7N60DM2 is a N-Channel MOSFET (metal oxide semiconductor field effect transistor) that has been designed to provide high-speed switching capabilities while also offering low on-resistance. Its main application is in power switching and protection circuits, such as power stages or voltage regulators. The device is housed in the TO-220 package, making it suitable for applications in which a high-powered MOSFET is needed, but a large footprint is undesired.
The STF7N60DM2 is a specific type of MOSFET known as an “enhancement-mode” device. This type of MOSFET requires an external voltage in order to turn-on, usually in the form of a gate voltage. In this case, the gate voltage must be higher than 10V for full conduction to occur. This gate voltage serves to open the MOSFET’s conducting channel and allow current to flow from the source to the drain. This is the device’s main operating principle.
In terms of its application field, the STF7N60DM2 is seen as applicable to many high-power switching applications, such as railway power systems, as well as adjustable current, voltage, and power supplies — all of which commonly require the use of an enhancement-mode device in order to ensure full conduction. In addition, the device is suitable for DC/DC converters and motor drive circuits. It is also used in DC-DC battery chargers, LED backlighting, and contactor relays.
Another key field of application for the STF7N60DM2 is that of load switching, particularly industrial load switching. It can provide reliable load switching for loads up to 60 Amps and 400V, for both small-signal and high-power circuits. The device achieves this through its combination of low on resistance, low gate-source voltage, and low gate-source capacitance. Finally, it is also utilized in high-speed signal switching in digital logic circuits, such as computer processors and data transfer buses.
The STF7N60DM2 is a high-performance MOSFET device with excellent switching speed, low on-state resistance, and low gate-source capacitance. The device is used in a wide range of applications, from high-speed signal switching in digital circuitry, to industrial load switching, to DC-DC battery chargers, to motor drive circuits, and more. Its primary application field is that of power switching and protection, but due to its versatility, it can find use in any of the applications previously mentioned. Its primary operating principle is that of an enhancement-mode device, which requires the use of an external gate voltage to turn-on and allow current to flow.
The specific data is subject to PDF, and the above content is for reference
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