STGW25M120DF3 Allicdata Electronics
Allicdata Part #:

497-15058-5-ND

Manufacturer Part#:

STGW25M120DF3

Price: $ 4.07
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 1200V 50A 375W
More Detail: IGBT Trench Field Stop 1200V 50A 375W Through Hole...
DataSheet: STGW25M120DF3 datasheetSTGW25M120DF3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 4.07000
10 +: $ 3.94790
100 +: $ 3.86650
1000 +: $ 3.78510
10000 +: $ 3.66300
Stock 1000Can Ship Immediately
$ 4.07
Specifications
Power - Max: 375W
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 265ns
Test Condition: 600V, 25A, 15 Ohm, 15V
Td (on/off) @ 25°C: 28ns/150ns
Gate Charge: 85nC
Input Type: Standard
Switching Energy: 850µJ (on), 1.3mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
Current - Collector Pulsed (Icm): 100A
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The STGW25M120DF3 is a N-Channel IGBT (insulated-gate bipolar transistor) in a TO-247 package. It is part of the F3 series, which is specially designed to improve power cycling and thermal performance. The device also has a low on-resistance, making it a great choice for applications such as motor control, power converters and power supplies.

The working principle of the STGW25M120DF3 is based on gallium arsenide technology. When a positive gate voltage is applied to the IGBT, electrons are injected into the N-type channel of the gate region, which narrows the width of the channel underneath the gate and increases the electric field across it. This increases the current between the Collector and Emitter of the IGBT, and it acts as an on/off switch.

This IGBT is suitable for use in applications that require high power handling capability such as motor control, power converters, power inverters, and server power supplies. It is also perfect for use in automotive applications, as the low on-resistance and high peak power levels make the IGBT ideal for controlling engines and other automotive electrical systems.

As its collector-emitter voltage rating is 1200 V, the device is suitable for use in high-voltage power circuits. It has a maximum operating junction temperature of 175 °C, making it suitable for operating in high-heat conditions. Furthermore, its high surge current capability also makes it ideal for high dynamic loads.

The IGBT also offers excellent EMI performance, with a low rate of electromagnetic emissions. In addition, the device has a low noise figure, which is often necessary for equipment in industrial environments. Finally, the IGBT enables fast switching, making it ideal for demanding applications.

Overall, the STGW25M120DF3 is an excellent choice for high-power applications. It is robust, reliable and efficient, and it provides excellent performance in a variety of applications and environments. Thanks to its low on-resistance and high peak power levels, it is perfect for controlling engines, power supplies and power converters.

The specific data is subject to PDF, and the above content is for reference

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