
Allicdata Part #: | 497-15058-5-ND |
Manufacturer Part#: |
STGW25M120DF3 |
Price: | $ 4.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 1200V 50A 375W |
More Detail: | IGBT Trench Field Stop 1200V 50A 375W Through Hole... |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 4.07000 |
10 +: | $ 3.94790 |
100 +: | $ 3.86650 |
1000 +: | $ 3.78510 |
10000 +: | $ 3.66300 |
Power - Max: | 375W |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 265ns |
Test Condition: | 600V, 25A, 15 Ohm, 15V |
Td (on/off) @ 25°C: | 28ns/150ns |
Gate Charge: | 85nC |
Input Type: | Standard |
Switching Energy: | 850µJ (on), 1.3mJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 25A |
Current - Collector Pulsed (Icm): | 100A |
Current - Collector (Ic) (Max): | 50A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STGW25M120DF3 is a N-Channel IGBT (insulated-gate bipolar transistor) in a TO-247 package. It is part of the F3 series, which is specially designed to improve power cycling and thermal performance. The device also has a low on-resistance, making it a great choice for applications such as motor control, power converters and power supplies.
The working principle of the STGW25M120DF3 is based on gallium arsenide technology. When a positive gate voltage is applied to the IGBT, electrons are injected into the N-type channel of the gate region, which narrows the width of the channel underneath the gate and increases the electric field across it. This increases the current between the Collector and Emitter of the IGBT, and it acts as an on/off switch.
This IGBT is suitable for use in applications that require high power handling capability such as motor control, power converters, power inverters, and server power supplies. It is also perfect for use in automotive applications, as the low on-resistance and high peak power levels make the IGBT ideal for controlling engines and other automotive electrical systems.
As its collector-emitter voltage rating is 1200 V, the device is suitable for use in high-voltage power circuits. It has a maximum operating junction temperature of 175 °C, making it suitable for operating in high-heat conditions. Furthermore, its high surge current capability also makes it ideal for high dynamic loads.
The IGBT also offers excellent EMI performance, with a low rate of electromagnetic emissions. In addition, the device has a low noise figure, which is often necessary for equipment in industrial environments. Finally, the IGBT enables fast switching, making it ideal for demanding applications.
Overall, the STGW25M120DF3 is an excellent choice for high-power applications. It is robust, reliable and efficient, and it provides excellent performance in a variety of applications and environments. Thanks to its low on-resistance and high peak power levels, it is perfect for controlling engines, power supplies and power converters.
The specific data is subject to PDF, and the above content is for reference
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