STGW20IH125DF Allicdata Electronics

STGW20IH125DF Discrete Semiconductor Products

Allicdata Part #:

497-14559-5-ND

Manufacturer Part#:

STGW20IH125DF

Price: $ 2.72
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 1250V 40A 259W TO-247
More Detail: IGBT Trench Field Stop 1250V 40A 259W Through Hole...
DataSheet: STGW20IH125DF datasheetSTGW20IH125DF Datasheet/PDF
Quantity: 341
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 2.46960
10 +: $ 2.22012
100 +: $ 1.81881
500 +: $ 1.54832
1000 +: $ 1.30580
Stock 341Can Ship Immediately
$ 2.72
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1250V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: 259W
Switching Energy: 410µJ (off)
Input Type: Standard
Gate Charge: 68nC
Td (on/off) @ 25°C: -/106ns
Test Condition: 600V, 15A, 10 Ohm, 15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Description

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STGW20IH125DF is one of the most widely used transistors, specifically categorised as IGBTs - Single. This transistor’s potential applications include motor drives, solar inverters, and UPS systems, due to its high-visibility construction and increased power density. This transistor is ideal for applications where size and efficiency are both important, as well as those that require higher currents and many switching cycles.

In terms of its construction, the STGW20IH125DF is a non-insulated gate type. This type of transistor is designed to increase the efficiency by allowing a larger channel opening current, or IDC, along with a very low OFF-state voltage, VCE(sat). This allows for lower power dissipation, as well as higher efficiency over standard types of insulated gate transistors.

This device also has low switching losses due to its faster switching times, which can reduce the number of cycles required for applications that require high speed and long life. Additionally, the STGW20IH125DF can operate at higher frequencies than most standard insulated gate transistors, which further increases the efficiency and speed.

The STGW20IH125DF’s working principle is relatively simple. The transistor is essentially a three-terminal device, consisting of a source, an emitter, and a collector. When a voltage is applied to the source, it creates a voltage across the emitter-collector junction. This voltage is called “gate-source voltage”, which causes a current to flow through the emitter-collector junction and out to the collector.

When the current reaches the collector, it creates a magnetic field around it, which causes the transistor to conduct. This effect is called “conduction”. This magnetic field can be used to control the current going out of the transistor, allowing it to be used as a component for electronic circuits.

The STGW20IH125DF is a highly versatile component due to its characteristics and applications. This type of transistor is ideal for motor drives, solar inverters, and UPS systems, or for any application requiring higher currents, faster switching, and higher efficiency. This transistor is also highly reliable, making it an ideal choice for long-term applications.

Overall, this device’s combination of features and performance make it a valuable component, and its versatility is only matched by its reliable construction. The STGW20IH125DF offers a wide range of applications and many advantages, making it one of the most successful types of transistors.

The specific data is subject to PDF, and the above content is for reference

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