STGW15S120DF3 Allicdata Electronics
Allicdata Part #:

497-15625-5-ND

Manufacturer Part#:

STGW15S120DF3

Price: $ 4.85
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 1200V 15A TO247
More Detail: IGBT Trench Field Stop 1200V 30A 259W Through Hole...
DataSheet: STGW15S120DF3 datasheetSTGW15S120DF3 Datasheet/PDF
Quantity: 73
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 4.41000
10 +: $ 3.98223
100 +: $ 3.29692
500 +: $ 2.87091
1000 +: $ 2.50047
Stock 73Can Ship Immediately
$ 4.85
Specifications
Power - Max: 259W
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 270ns
Test Condition: 600V, 15A, 22 Ohm, 15V
Td (on/off) @ 25°C: 23ns/140ns
Gate Charge: 53nC
Input Type: Standard
Switching Energy: 540µJ (on), 1.38mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Current - Collector Pulsed (Icm): 60A
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The STGW15S120DF3 is a part of the IGBT (Insulated Gate Bipolar Transistor) family. IGBTs are a unique type of transistor in which an insulated gate is used to control the flow of current through a substrate or base to the collector. IGBTs are typically used to switch high power or high voltage circuits and are especially useful in applications requiring low voltage control of large currents. The STGW15S120DF3 is a single IGBT with a maximum current rating of 150A and an operating voltage as high as 1200V.

The STGW15S120DF3 is an excellent choice for a broad range of applications that require an efficient and cost-effective method of controlling high-current and high-voltage circuits. It can be used in AC and DC motor controllers, Uninterruptible Power Supplies (UPS), power converters, switching mode power supplies, welding applications, and many other areas that require reliable control of high current and/or high voltage.

The working principle of the STGW15S120DF3 is based on the principles of IGBTs. It is constructed with a n-type substrate and p-type base material, which form the collector and emitter of the transistor. A gate electrode is inserted between the two materials, which controls the current through the transistor by using an insulated gate to regulate the flow.

When a positive voltage is applied to the gate electrode, a current flows through the n-type substrate to the p-type base material. This causes the device to conduct a current from the collector to the emitter. Conversely, when a negative voltage is applied to the gate electrode, the current flow is reduced and the device ceases to conduct.

The STGW15S120DF3 is also designed to deliver very fast switching speeds, allowing it to switch faster than traditional MOSFETs. This makes it suitable for applications that require higher speeds, such as PWM (pulse-width modulation) motor controllers. Additionally, it has a low gate charge, making it very energy efficient.

The STGW15S120DF3 is a versatile device that provides a reliable and cost-effective solution for controlling high current and/or high voltage circuits. It can be used in a wide range of applications, thanks to its high current rating and ability to switch at high speeds. It offers excellent performance and energy efficiency, making it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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