Allicdata Part #: | 497-9063-5-ND |
Manufacturer Part#: |
STGW45NC60VD |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 600V 90A 270W TO247 |
More Detail: | IGBT 600V 90A 270W Through Hole TO-247 Long Leads |
DataSheet: | STGW45NC60VD Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Switching Energy: | 333µJ (on), 537µJ (off) |
Supplier Device Package: | TO-247 Long Leads |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 45ns |
Test Condition: | 390V, 30A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 33ns/178ns |
Gate Charge: | 126nC |
Input Type: | Standard |
Series: | PowerMESH™ |
Power - Max: | 270W |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 30A |
Current - Collector Pulsed (Icm): | 220A |
Current - Collector (Ic) (Max): | 90A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Part Status: | Obsolete |
Packaging: | Tube |
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The STGW45NC60VD is a single 600 V, 45 A field-stop IGBT from STMicroelectronics. This IGBT has an outstanding combination of current and voltage rating and an ideal input output packaging solution for various uses such as IPM, rotation motors, solar inverters, and UPS. This particular device is specifically designed to reduce switching losses. Its structure consists of a 600 V high voltage vertical double-diffused MOS (VDMOS) process on an N-well.
The STGW45NC60VD is ideal for use in applications where high power density, low losses, and high efficiency are required. It has low gate charge and is designed to operate in junction temperature range up to 150 °C. This IGBT has an extremely low resistance, making it ideal for high-power and high-efficiency applications. It has an excellent short and sustained current capability, fast switching speed, and can handle large peak currents up to ±60 A.
The device works on the principle of a Field Stop IGBT. A field stop IGBT is an insulated gate bipolar transistor (IGBT) which is an integrated power semiconductor device combining the functionality of a MOSFET and BI junction bipolar transistor. This device works by using a thin layer of silicon dioxide material to isolate the gate of the device from the body and collector.
This isolation layer limits the amount of electric field that can be applied to the gate, preventing gate-to-body breakdown. As a result, the gate voltage needed to turn on the IGBT is significantly lower, allowing it to switch at slower speeds with less voltage swing than a regular BJT. Additionally, the field stop IGBT also benefits from higher breakdown voltages due to the increased height of the oxide layer between the gate and the body.
In operation, when the gate voltage is low, the transistor is off and when the gate voltage is high, the transistor is on. When the gate voltage is applied, the insulated gate allows only a limited amount of electric field to cause current to flow between the collector and emitter. This results in reduced power losses and improved efficiency during operation.
The STGW45NC60VD is an ideal solution for high power applications. Its combination of high current, low switching losses and high efficiency makes it ideal for a wide range of tasks. Its small size makes it a great choice for applications in tight spaces, while its thermal characteristics make it a great choice for applications requiring high reliability. The STGW45NC60VD is a great choice for applications needing maximum performance and efficiency for any application.
The specific data is subject to PDF, and the above content is for reference
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