STGWA60H65DFB

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650V
Current - Collector (Ic) (Max):	80A
Current - Collector Pulsed (Icm):	240A
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 60A
Power - Max:	375W
Switching Energy:	1.59mJ (on), 900µJ (off)
Input Type:	Standard
Gate Charge:	306nC
Td (on/off) @ 25°C:	66ns/210ns
Test Condition:	400V, 60A, 10 Ohm, 15V
Reverse Recovery Time (trr):	60ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 Long Leads

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Introduction

The STGWA60H65DFB IGBT (Insulated Gate Bipolar Transistor) is a high performance transistor that can be used in many applications. IGBTs are power semiconductors that combine the high-speed switching of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) with the low-loss, easy to drive characteristics of BJTs (Bipolar Junction Transistors). As such, IGBTs are ideally suited for high-power, high frequency applications such as motor control, power conversion, and power switching.

Application Field

The STGWA60H65DFB can be used in a variety of applications, including power electronics and motor control, high-speed switching, UPS (Uninterruptible Power Supply), and power conversion. Due to their high-speed switching capabilities, IGBTs are often used in DC/DC (Direct Current to Direct Current) converters, AC to AC (Alternating Current to Alternating Current) converters, and DC/AC inverters. Additionally, IGBTs can be used in high-power switching circuits and motor drive circuits, as well as in industrial automation and robotics.

Working Principle

The STGWA60H65DFB is a MOS-controlled IGBT, which means that it is controlled by a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) gate voltage. This means that the transistor can be switched on or off with a control signal, allowing fast switching speeds and minimal switching losses. When the gate voltage is applied, the current is diverted through the upper thyristor, allowing current to flow from the collector to the emitter.In addition, the IGBT has a reverse-recovery time of less than 10ns, meaning that it can quickly switch between on and off states without excess power losses. This enables the transistor to operate efficiently in high frequency, high-power switching applications.

Conclusion

The STGWA60H65DFB IGBT is a high performance transistor designed for use in power electronics, motor control, and high-speed switching applications. The transistor is a MOS-controlled IGBT, meaning it can be easily switched on or off with a control signal. Additionally, the IGBT has a reverse-recovery time of less than 10ns, allowing it to quickly switch between on and off states without excess power losses. As such, the STGWA60H65DFB is an ideal solution for high-power, high-frequency switching applications.

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