Allicdata Part #: | 497-13763-5-ND |
Manufacturer Part#: |
STGW20V60DF |
Price: | $ 2.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 600V 40A 167W TO247 |
More Detail: | IGBT Trench Field Stop 600V 40A 167W Through Hole ... |
DataSheet: | STGW20V60DF Datasheet/PDF |
Quantity: | 614 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 1.92780 |
10 +: | $ 1.73187 |
100 +: | $ 1.41895 |
500 +: | $ 1.20790 |
1000 +: | $ 1.01871 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 40A |
Current - Collector Pulsed (Icm): | 80A |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 20A |
Power - Max: | 167W |
Switching Energy: | 200µJ (on), 130µJ (off) |
Input Type: | Standard |
Gate Charge: | 116nC |
Td (on/off) @ 25°C: | 38ns/149ns |
Test Condition: | 400V, 20A, 15V |
Reverse Recovery Time (trr): | 40ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
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STGW20V60DF is a single insulated gate bipolar transistor (IGBT) manufactured by Infineon Technologies. It is a IGBTdesigned to switch the high voltagegatesignal. The transistor is designed with high-voltage tolerance up to 600V and low on-resistanceto minimizeconductionlosses. It also comes with a wide range of working temperature range suitable for operation in a variety ofenvironments. This IGBT is suitable for applications requiringhigh-power switching such as automotive, industrial, andconsumer-based applications.
The STGW20V60DF IGBT uses a voltage-controlled gate to determine the flow of current through the device. The gate voltage determines the conductivity of the IGBT by controlling the amount of current that flows through the device. When the gate voltage is increased, the current flow increases, allowing more current to pass through the IGBT. By controlling the gate voltage, the user can set the IGBT to switch on or off. This makes the IGBT ideal for switching applications,in which the user is able to control the on/offstate of the device.
The STGW20V60DF IGBT is also designed with a number of features to ensure its longevity. The IGBT is designed with an over-voltage protection which prevents the device from operating in unsafe operating conditions. It also has an over-current protection to prevent the IGBT from being damaged by excessive current flow. The IGBT also uses advanced thermal management techniques to safeguard against overheating. Finally, the IGBT comes with short-circuit protection to protect the device from damage in the event of a short circuit.
The STGW20V60DF IGBT is suitable for a variety of applications, such as automotive, industrial and consumer based applications. It is ideal for applications requiring high-power switching, high temperature operation, and high-voltage performance. The IGBT is also suitable for use in applications where power security is a priority. The IGBT has a wide working temperature range, making it suitable for high temperature operation.
In summary, the STGW20V60DF IGBT is a high-voltage, low-on-resistance IGBT suitable for a range of applications. It is designed with a high-voltage range of up to 600V and a wide working temperature range. The device uses a voltage-controlled gate to determine the current flow through the device and a number of protection features to ensure its longevity. This IGBT is well suited for applications requiring high power switching, high temperature operation and high-voltage performance.
The specific data is subject to PDF, and the above content is for reference
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