STGW35HF60WD Allicdata Electronics
Allicdata Part #:

497-10073-5-ND

Manufacturer Part#:

STGW35HF60WD

Price: $ 2.84
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 600V 60A 200W TO-247
More Detail: IGBT 600V 60A 200W Through Hole TO-247-3
DataSheet: STGW35HF60WD datasheetSTGW35HF60WD Datasheet/PDF
Quantity: 45
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 2.57670
10 +: $ 2.31462
100 +: $ 1.89617
500 +: $ 1.61420
1000 +: $ 1.36137
Stock 45Can Ship Immediately
$ 2.84
Specifications
Switching Energy: 290µJ (on), 185µJ (off)
Base Part Number: STG*35HF
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 50ns
Test Condition: 400V, 20A, 10 Ohm, 15V
Td (on/off) @ 25°C: 30ns/175ns
Gate Charge: 140nC
Input Type: Standard
Series: --
Power - Max: 200W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Current - Collector Pulsed (Icm): 150A
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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STGW35HF60WD is a type of transistor used in applications where high switching speed, low waser dissipation, reduced EMI and low power losses are needed. It is classified as a part of the Transistor family - IGBTs - Single.

IGBT is defined as an insulated-gate bipolar transistor which is a three-terminal power semiconductor device, primarily used as an electronic switch to control power flow. It is a combination of an insulated gate MOSFET (IGFET) and p-n-p-n transistor, tailored to functions like controlled rectification, switch-mode power supply construction and switched-mode audio-amplifiers.The STGW35HF60WD helps to solve power delivery design challenges in applications requiring low and medium frequency dynamic switching. It is featured as having high ruggedness, good EMI performance and low power loss properties, together making it a popular and cost-effective solution to replace IGBT switching technology.

The structure of the STGW25HF60WD is based on single lateral IGBT technology. It consists of the following:

  • An N-channel, vertical insulated Gate Field Effect Transistor (IGFET) acting as the control device, and
  • A High Voltage, P-Channel Vertical Gate Transistor (VGT) acting as the power device.

The basic working principle of the STGW35HF60WD is that when energy is applied to the gate of the IGFET, a voltage is created and the gate will start to conduct allowing current flow through it. When current is applied to the gate of the VGT, this will cause the VGT to start to conduct, thereby allowing current flow through it. When current flow is established, further current will be conducted by the VGT and the IGFET transistors.

Compared to other transistors, the STGW35HF60WD has the highest rated voltage in its family (650V) and provides improved performance in switching applications. It has a current gain of 4A and comes in a standard 8-pin, surface mounted module. It also provides advantages compared to conventional IGBTs because of its low losses, improved EMI performance and excellent switching characteristics.

The STGW35HF60WD has many applications in different areas. It is used for motor drive control, solar photovoltaic inverters, UPS and power supplies, automotive power systems and more. Its use in motor drive control makes it suitable for conversion of mechanical energy into electrical signals with great accuracy. Thanks to its fast switching speed and excellent EMI performance, the STGW35HF60WD is also used in switch-mode power supplies and other high frequency circuits.Overall, the STGW35HF60WD is an excellent choice for switching applications due to its low losses and EMI performance, making it attractive for use in both power supply and motor drive control applications. Its impressive characteristics also make it a cost effective solution to replace IGBT switching technology.

The specific data is subject to PDF, and the above content is for reference

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