
Allicdata Part #: | 497-15135-5-ND |
Manufacturer Part#: |
STGW80V60F |
Price: | $ 7.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 600V 120A 469W TO247 |
More Detail: | IGBT Trench Field Stop 600V 120A 469W Through Hole... |
DataSheet: | ![]() |
Quantity: | 486 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 6.97410 |
10 +: | $ 6.29874 |
100 +: | $ 5.21451 |
500 +: | $ 4.54073 |
1000 +: | $ 3.95483 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 120A |
Current - Collector Pulsed (Icm): | 240A |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 80A |
Power - Max: | 469W |
Switching Energy: | 1.8mJ (on), 1mJ (off) |
Input Type: | Standard |
Gate Charge: | 448nC |
Td (on/off) @ 25°C: | 60ns/220ns |
Test Condition: | 400V, 80A, 10 Ohm, 15V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
An IGBT (Insulated Gate Bipolar Transistors) is a type of transistor that consists of two back-to-back p-n junctions connected together by a common gate electrode. The STGW80V60F IGBT module is designed specifically for single-switch topologies used in AC motor drives and switching power supplies. With its high voltage and current capabilities, the STGW80V60F offers a powerful and efficient solution to a variety of power conversion applications.
Applications
The STGW80V60F is a single-switch IGBT module intended for applications in variable frequency AC motor drives, switching power supplies and other DC/AC converters. It is frequently used in applications such as:
- AC inverters for constant/variable speed drives
- Auxiliary power sources for welding machines and uninterruptible power supplies
- Automatic voltage regulators for generators and UPS systems
- AC servo systems and brushless DC motor drives
- Motor starters and electronic ballasts
- Pulse-width-modulated (PWM) DC/AC converters
Working Principle
An IGBT is comprised of two MOSFET transistors connected back to back, formed by a p-type substrate and an n-type substrate, separated by a thin layer of insulation. The common gate electrode controls the current flow between the two transistors. When the gate electrode is forward biased, it forms a channel between the two substrates, allowing current to flow freely. The IGBT structure provides better efficiency and higher switching speed than other types of transistors.
The STGW80V60F uses the latest IGBT Technology, which features a high voltage tolerance, high current switching capabilities, low Inter-drain capacitance, and high power efficiency. Its low gate charge and soft switching characteristics ensure good protection against short-term overloads. With its advanced thermal design, it also allows for higher operating current and brief overload currents. This makes it ideal for applications that require high reliability and durability.
In summary, the STGW80V60F is an ideal solution for applications in variable frequency AC motor drives, switching power supplies, and other DC/AC converters. It offers high voltage, high current capabilities and a low gate charge, making it more efficient and reliable than other types of transistors. Its advanced thermal design also provides better protection against short-term overloads and higher operating current.
The specific data is subject to PDF, and the above content is for reference
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