| Allicdata Part #: | 497-14228-5-ND |
| Manufacturer Part#: |
STGWT40H60DLFB |
| Price: | $ 2.95 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | IGBT 600V 80A 283W TO3P-3L |
| More Detail: | IGBT Trench Field Stop 600V 80A 283W Through Hole ... |
| DataSheet: |  STGWT40H60DLFB Datasheet/PDF |
| Quantity: | 537 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| 1 +: | $ 2.68380 |
| 10 +: | $ 2.40849 |
| 100 +: | $ 1.97360 |
| 500 +: | $ 1.68008 |
| 1000 +: | $ 1.41693 |
| Series: | -- |
| Packaging: | Tube |
| Lead Free Status / RoHS Status: | -- |
| Part Status: | Active |
| Moisture Sensitivity Level (MSL): | -- |
| IGBT Type: | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| Current - Collector (Ic) (Max): | 80A |
| Current - Collector Pulsed (Icm): | 160A |
| Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 40A |
| Power - Max: | 283W |
| Switching Energy: | 363µJ (off) |
| Input Type: | Standard |
| Gate Charge: | 210nC |
| Td (on/off) @ 25°C: | -/142ns |
| Test Condition: | 400V, 40A, 10 Ohm, 15V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
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STGWT40H60DLFB Application Field and Working Principle
STGWT40H60DLFB is a type of insulated gate bipolar transistor (IGBT) that belongs to the single family. It is a three-terminal device with an emitter, base and collector. The device has a junction field-effect transistor (JFET) gate that is electrically insulated from the main device body.
The STGWT40H60DLFB IGBT is a fast switching device with a low on-state voltage drop, making it an ideal choice for power switching circuits. This type of IGBT also has a low gate drive power consumption and a high thermal cycling capability. The device is also suitable for high switching frequency applications such as motor drives and power conversion.
The working principle of the STGWT40H60DLFB IGBT is based on the bipolar junction transistor (BJT) structure. A BJT is a current-controlled device with a base terminal that controls the flow of electrons between the other two terminals, i.e. the collector and the emitter. In the case of the STGWT40H60DLFB IGBT, the insulated gate is used to control the flow of current between the collector and emitter.
The gate terminal acts as an insulator between the base and emitter and also functions as an additional layer of protection against electrical over-currents. This feature allows the device to act as both a switch and a current limiter in power circuits. In addition, the insulated gate also enables faster switching than BJTs, which makes the STGWT40H60DLFB ideal for high-speed applications.
The STGWT40H60DLFB is a versatile IGBT and can be used in a wide range of applications such as motor drives, DC-DC converter projects and power supplies. The device also has a wide range of current ratings and can be used in applications that require a low on-state voltage drop. The fast switching characteristics of the STGWT40H60DLFB make it an ideal choice for projects that require quick transitions between low and high power states.
In conclusion, the STGWT40H60DLFB is an ideal choice for power switching circuits as its low on-state voltage drop and fast switching characteristics make it well-suited for high-frequency applications such as motor drives and power conversion. The device also has a low gate drive power consumption and a high thermal cycling capability that make it even more reliable for use in power applications.
The specific data is subject to PDF, and the above content is for reference
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