
Allicdata Part #: | 497-7486-5-ND |
Manufacturer Part#: |
STGW35NB60S |
Price: | $ 0.85 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 600V 70A 200W TO247 |
More Detail: | IGBT 600V 70A 200W Through Hole TO-247-3 |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1200 +: | $ 0.76734 |
Power - Max: | 200W |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 480V, 20A, 100 Ohm, 15V |
Td (on/off) @ 25°C: | 92ns/1.1µs |
Gate Charge: | 83nC |
Input Type: | Standard |
Switching Energy: | 840µJ (on), 7.4mJ (off) |
Series: | PowerMESH™ |
Vce(on) (Max) @ Vge, Ic: | 1.7V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 250A |
Current - Collector (Ic) (Max): | 70A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
STGW35NB60S is a type of IGBT (Insulated Gate Bipolar Transistor) that belongs to the single category. An IGBT is a power semiconductor device which combines the properties of both a MOSFET (metal-oxide-semiconductor field-effect transistor) and a BJT (bipolar junction transistor). An IGBT provides high efficiency, good power density and fast switching in comparison to other devices.
The STGW35NB60S is suitable for many different applications such as motor drives, inverters, solar and welding applications, where a high-current, low-loss and fast switching IGBT is required. This particular device is rated at 600V, 35A with a maximum dissipated power of 1120W, a collector-emitter saturation voltage of 2.3V, and a turn on and turn off times of 25ns and 80ns, respectively.
The working principle of an IGBT is based on the MOSFET, where a gate voltage is used to control the current. An IGBT, however, is a two-terminal device with an additional ‘gate’ terminal, which allows the control of the current through the device. The gate terminal is insulated from the two main terminal; this arrangement is what gives the device its name. When a suitable voltage is applied to the gate of the IGBT, it forms a conductive channel between the emitter and collector, allowing current to flow.
The STGW35NB60S also features a built-in gate protection which prevents gate-source voltage overshoot and can also limit avalanche energy. This device is suitable for operation in high temperature environments (up to 175°C). Furthermore, it is capable of supporting high frequency applications with a minimum guaranteed frequency of 600kHz. The STGW35NB60S has an MTTF (Mean Time To Failure) of 20,000 hours at Tjcase=25°C.
In conclusion, IGBTs such as the STGW35NB60S are widely used in many different applications (especially in motor drives and inverters) due to its high-current, low-loss, fast switching and long MTTF characteristics. This particular device offers some of the best characteristics in its class, making it ideal for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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