STGW60H65DRF Allicdata Electronics
Allicdata Part #:

497-13166-ND

Manufacturer Part#:

STGW60H65DRF

Price: $ 6.52
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 650V 120A 420W TO247
More Detail: IGBT Trench Field Stop 650V 120A 420W Through Hole...
DataSheet: STGW60H65DRF datasheetSTGW60H65DRF Datasheet/PDF
Quantity: 324
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 5.92200
10 +: $ 5.34744
100 +: $ 4.42726
500 +: $ 3.85522
Stock 324Can Ship Immediately
$ 6.52
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 120A
Current - Collector Pulsed (Icm): 240A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Power - Max: 420W
Switching Energy: 940µJ (on), 1.06mJ (off)
Input Type: Standard
Gate Charge: 217nC
Td (on/off) @ 25°C: 85ns/178ns
Test Condition: 400V, 60A, 10 Ohm, 15V
Reverse Recovery Time (trr): 19ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Description

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The STGW60H65DRF is a 6.5 kV Field Stop IGBT developed by STMicroelectronics. This IGBT is designed to handle a wide range of motor control applications and is typically used in motor drives up to 6.5 kV peak voltage. This IGBT is provided in a dual-in-line package and has a typical current rating of 60A. The major advantage of this IGBT is its low switching losses, which allow it to achieve very high efficiency ratings.

The IGBT works on the principle of a combination of a bipolar transistor (BJT) and an insulated gate field-effect transistor (IGFET), which is in essence an advanced form of the JFET. A major aspect of this device is that it can provide both low resistance at low voltages (when turned on) and high resistance at higher voltages (when turned off), allowing for improved control of a circuit in which it is used. To turn the device on, the gate of the IGBT is forward-biased, resulting in current flow between its emitter and collector. To turn it off, the gate voltage is reversed, resulting in the device becoming an open circuit.

The STGW60H65DRF IGBT can be used in a wide range of motor drive applications due to its low switching losses. This device is commonly used in motor drives up to 6.5 kV peak voltage, enabling high efficiency and low losses. It is also suitable for other applications, such as DC-DC converters, welding applications, and many more. The device comes with plated leads for soldering, allowing it to be easily mounted onto a printed circuit board and integrated into a system.

The STGW60H65DRF IGBT is a low switching loss, high voltage device that is perfectly suited to handle motor control applications up to 6.5 kV peak voltage. The device works on the principle of a combination of a bipolar transistor and an insulated gate field-effect transistor, which allows for low resistance at low voltages and high resistance at higher voltages. This device is often used in motor drives, DC-DC converters, and welding applications. By providing a plated lead for soldering, this device is easily integrated into any system.

The specific data is subject to PDF, and the above content is for reference

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