STGWA15H120DF2

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	30A
Current - Collector Pulsed (Icm):	60A
Vce(on) (Max) @ Vge, Ic:	2.6V @ 15V, 15A
Power - Max:	259W
Switching Energy:	380µJ (on), 370µJ (off)
Input Type:	Standard
Gate Charge:	67nC
Td (on/off) @ 25°C:	23ns/111ns
Test Condition:	600V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr):	231ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247-3

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STGWA15H120DF2 application field and working principle

STGWA15H120DF2 is a type of transistor that belongs to the IGBT (Insulated-gate Bipolar Transistor) series and is a special type of transistor called a single. It is a device that acts as a switch and is used to allow or limit the current that passes through it. STGWA15H120DF2 is a high-power device, capable of handling up to 1200 volts and 15 amps of current.

IGBTs are used in many different applications such as motor control, power converters, inverters, and power grid management. Single transistors such as the STGWA15H120DF2 are relatively new and are designed to handle high-power applications with more efficiency than traditional transistors.

The STGWA15H120DF2 is designed to handle high-power applications with great efficiency, making it particularly well-suited for use in motor control, inverters, and power grid management. The device features a high-voltage DMOS (dipole-metal-oxide semiconductor) structure and a unique high-speed internal structure which allows the device to have low power losses while achieving high switching speed.

The device is a unidirectional device, meaning that it can only be used to control the direction of current. The device is controlled by a gate voltage, meaning that the current can be limited or allowed by applying a positive or negative voltage to the gate. When no voltage is applied to the gate, the device is in a so-called OFF-state, meaning that the current is blocked. By applying a positive or negative voltage, either direction of current can be allowed.

The STGWA15H120DF2 is designed to be used in high-power applications such as motor control, inverters, and power grid management. Due to its high efficiency, the device is ideal for use in applications where power losses need to be kept to a minimum.

The device features a high-speed switching rate, which allows it to quickly change from an OFF-state to an ON-state, allowing for more efficient power usage and improved performance. Due to the nature of its gate voltage control, the device is capable of handling high voltages and currents with great efficiency.

In conclusion, the STGWA15H120DF2 is a unidirectional IGBT (Insulated-gate Bipolar Transistor) device that is designed to handle high-power applications such as motor control, inverters, and power grid management. It features a high-speed internal structure and a unique high-voltage DMOS (dipole-metal-oxide semiconductor) structure which provide low power losses and improved performance. The device is controlled by a gate voltage allowing for efficient use of power in high-power applications.

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