STGWA8M120DF3 Discrete Semiconductor Products

Input Type:	Standard
Supplier Device Package:	TO-247 Long Leads
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	103ns
Test Condition:	600V, 8A, 33 Ohm, 15V
Td (on/off) @ 25°C:	20ns/126ns
Gate Charge:	32nC
Series:	M
Switching Energy:	390µJ (on), 370µJ (Off)
Power - Max:	167W
Vce(on) (Max) @ Vge, Ic:	2.3V @ 15V, 8A
Current - Collector Pulsed (Icm):	32A
Current - Collector (Ic) (Max):	16A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	Trench Field Stop
Part Status:	Active

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Introduction

The STGWA8M120DF3 is a Single IGBT (Insulated Gate Bipolar Transistor) that is specifically designed for high frequency switching applications. Specifically, the device is designed for use in high speed switching operations in industrial automation systems.

Application Field of STGWA8M120DF3

The STGWA8M120DF3 is designed for a wide range of industrial automation applications including converters, inverters, AC motor drives, switch mode power supplies, welding systems and others. In particular, the device is well suited for high-frequency switching applications up to 10kHz as it can switch more quickly than conventional IGBTs. Additionally, this device has a relatively low on-state voltage drop, making it an excellent choice for high current applications. The STGWA8M120DF3 is an advanced switching device that has many advantages over standard IGBTs. It has a high input capacitance which makes it suitable for high frequency applications, and a low EMI (electromagnetic interference) to reduce unwanted noise. Furthermore, the device\'s high current and voltage ratings make it especially suitable for power applications as well as higher frequency switching applications. The STGWA8M120DF3 also offers a wide range of features for improved safety and reliability. These features include Under Voltage Lockout (UVLO) to protect against low voltage operation, built-in Fault Protection (PFC) to guard against short circuits, and an Isolation design to minimize inductance.

Working Principle of STGWA8M120DF3

The STGWA8M120DF3 is a Single IGBT that works by controlling the flow of current between two distinct regions. This is done by applying a voltage to the gate. When the gate voltage is zero, the IGBT is said to be in "off" state. This means that it is blocking the current flow between the two distinct regions. When the gate voltage is increased to a certain level, the IGBT will enter the "on" state. In the "on" state, the IGBT will allow the current to flow between the two distinct regions.To control the current flow, the IGBT also needs a collector-emitter voltage, which is normally provided by the load. With the collector-emitter voltage applied, the IGBT can be switched between the "off" and "on" states. This is done by applying the gate voltage and varying its magnitude. The key advantage of the IGBT is its ability to switch between the two states very quickly, allowing for much higher frequency switching applications than is possible with conventional MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors). As such, the STGWA8M120DF3 is especially suitable for high speed switching operations, making it ideal for industrial automation applications.

Conclusion

The STGWA8M120DF3 is a Single IGBT designed for high frequency switching applications. This device is ideal for industrial automation systems, as it is capable of high frequency switching up to 10kHz. The STGWA8M120DF3 also offers a wide range of features, such as Under Voltage Lockout (UVLO) and Fault Protection (PFC), to improve safety and reliability. Furthermore, the device has a low on-state voltage drop, making it suitable for high current applications. In conclusion, the STGWA8M120DF3 is an advanced switching device that is suitable for a variety of industrial automation applications.

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