STGW30M65DF2

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650V
Current - Collector (Ic) (Max):	60A
Current - Collector Pulsed (Icm):	120A
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 30A
Power - Max:	258W
Switching Energy:	300µJ (on), 960µJ (off)
Input Type:	Standard
Gate Charge:	80nC
Td (on/off) @ 25°C:	31.6ns/115ns
Test Condition:	400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr):	140ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247

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STGW30M65DF2 is a unit of insulated gate bipolar transistor (IGBT) belonging to the single transistors category. It is a high-power semiconductor device that has motor-control applications. This transistor is made of three layers of alternating n-type and p-type materials known as emitter, collector and emitter layers. It is basically a switch which can be turned on by the application of a small voltage. When this transistor is on, it acts as a closed gate and as a result, current is applied to the collector layer.The STGW30M65DF2 is a high-power NPN transistor with a high current rating of 30A and a maximum collector-emitter voltage of 600V. This device has a high voltage capability and is suitable for driving large loads. It features a low gate charge, fast switching capability and high efficiency. It also has a low on-resistance which allows it to perform better under low-to-moderate current load conditions.The STGW30M65DF2 is a popular choice for high-power motor control applications due to its fast switching capability. It is most often used in motor control systems to control current and voltage in a motor. This transistor can operate up to 1kHz and is suitable for controlling high current and torque of a motor.The working principle of a STGW30M65DF2 IGBT is simple. It operates as a continuous switch that is turned on or off depending on the voltage applied to its gate. When the gate voltage is low, the transistor is off and the collector-emitter current is zero. When the gate voltage is increased, a channel will be created allowing current to flow through the emitter-collector path.The STGW30M65DF2 IGBT is a versatile, high-power switching device for motor control applications due to its fast switching capability and low on-resistance. Its features and capabilities make it one of the most popular choices for high-power motor control systems. Its flexibility and reliability make it a good choice for applications where high current, voltage and torque control are desired.

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