STGW30N90D

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The STGW30N90D is a high-voltage IGBT (Insulated-Gate Bipolar Transistor) module designed for high-performance and easy to application. It is designed to be integrated into a variety of industrial applications like variable speed drives, welding, solar and wind power, induction heating and medical scanners. The device features an extended temperature range of -40 to +150 °C with a rated operational voltage of up to 900V. This IGBT also includes a self-protection mechanism against feedback current, programmable turn-off timer and over-temperature protection.

The STGW30N90D has a low on-state resistance and fast-switching capability that makes it a suitable option when power efficiency is a priority. With an optimized gate charge and charge storage ratio, this device can be used to reduce power consumption during operation and is suited for energy-efficiency applications. The low switching losses and low gate drive requirements further make this device ideal for applications with a high-frequency response such as home appliances, robotics, office automation and lighting systems.

The STGW30N90D operate according to the general principles of IGBTs. An IGBT is a three-terminal power semiconductor device, combining the control of a metal-oxide semiconductor field-effect transistor (MOSFET) and the linear characteristics of a bipolar junction transistor (BJT). MOSFETs are most commonly used to control high-power and high-voltage applications because they possess low on-state resistance and fast switching speed capabilities. However, due to their relatively complex gate-driving circuitry, they are more expensive than BJTs. The IGBT combines the essential attributes of both BJTs and MOSFETs to provide a cost-effective solution with both high power handling capability and high switching speed capabilities.

The STGW30N90D works by using a combination of both bipolar and metal oxide semiconductor technology. The three distinct terminals of the IGBT are referred to as the Emitter, Gate, and Collector. The Gate serves as a control terminal, which is driven by a gate driver circuit, and biases the IGBT from an off-state to an on-state when a positive voltage is applied. With the IGBT in an on-state, current is allowed to flow from the collector to the emitter, just like in a BJT. When the Gate voltage is driven to a negative voltage, the IGBT enters an off-state, and no current may pass between the collector and emitter. Due to this ability to rapidly shut off and on via Gate voltage, the IGBT can be used to efficiently control high-power and high-voltage systems.

The STGW30N90D is an ideal device for applications requiring high-power and high-voltage control. It features an extended operational temperature range and low on-state resistance, as well as low switching losses and low gate drive requirements. This device offers a cost-effective solution to applications such as variable speed drives, welding, solar and wind power, induction heating and medical scanners. With its optimized gate charge and charge storage ratio, it is also an optimal device selection when power efficiency is a priority.

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