STGW39NC60VD

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The STGW39NC60VD is a high-voltage, medium-power,insulated-gate bipolar transistor (IGBT) designed specificallyfor use in high-power, medium-voltage applications. The transistorhas been designed to provide superior performance withlow on-state resistance and low switching losses, allowing forvery efficient operation at high frequencies. The STGW39NC60VDtransistor is suitable for use in applications such as powerconversion, light dimming, motor control, anduninterruptible power supplies.

Components and Construction

The STGW39NC60VD transistor consists of a central silicon carbide (SiC) layer sandwiched between two layers of n-type silicon. Other components of the transistor include an insulated gate, a buffer layer, and a p-type anode layer. The transistor is designed to operate in either an enhancement mode or a depletion mode. In enhancement mode, the N-channel is fully conductive and the P-channel is blocked. In depletion mode, the P-channel is fully conductive and the N-channel is blocked.

Application Field and Working Principle

The STGW39NC60VD transistor is designed primarilyfor use in high-voltage and medium-power applications. Examples of such applications include power conversion, light dimming, motor control, and uninterruptible power supplies. The transistor can also be used for driving transformers for line-commutated converters, static switch power supplies, and UPS systems.

The working principle of the STGW39NC60VD transistoris based on the fact that when current flows through it, an electric field is created. The electric field causes an electric charge to accumulate at the insulated gate. This electric charge in turn produces a strong electrostatic field, which results in an increased potential barrier between the anode and the gate. As a result, the current flowing through the transistor is either blocked (depletion mode) or allowed to flow through the transistor (enhancement mode).

Performance Characteristics

The STGW39NC60VD transistor has a maximum storage temperature of 175 degrees Celsius, a maximum junction temperature of 175 degrees Celsius, and an operating temperature range of -40 to 125 degrees Celsius. It has a maximum voltage rating of 600 volts, and a maximum current rating of 175 amps. In terms of switching performance, the transistor has a total gate charge of 215 nano-coulombs, a maximum non-repetitive peak surge current rating of 600 amps, and a low fall time of 4.3 nanoseconds.

Advantages

The main advantages of the STGW39NC60VD transistor are its low on-state resistance, low switching losses, and high-frequency operation. Its low on-state resistance (RDS(on)) allows for efficient energy conversion, and its low switching losses minimize power loss during power conversion and switching operations. Additionally, the transistor’s high-frequency operation allows for fast switching and control of high-power loads.

Conclusion

The STGW39NC60VD transistor is a high-voltage, medium-power IGBT designed specifically for use in high-power, medium-voltage applications. It is suitable for use in applications such as power conversion, light dimming, motor control, and uninterruptible power supplies. The transistor’s low on-state resistance, low switching losses, and high-frequency operation make it an ideal choice for such applications.

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