Allicdata Part #: | 497-13767-5-ND |
Manufacturer Part#: |
STGW40V60DLF |
Price: | $ 2.78 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 600V 80A 283W TO247 |
More Detail: | IGBT Trench Field Stop 600V 80A 283W Through Hole ... |
DataSheet: | STGW40V60DLF Datasheet/PDF |
Quantity: | 357 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 2.52630 |
10 +: | $ 2.26737 |
100 +: | $ 1.85749 |
500 +: | $ 1.58125 |
1000 +: | $ 1.33358 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 80A |
Current - Collector Pulsed (Icm): | 160A |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 40A |
Power - Max: | 283W |
Switching Energy: | 411µJ (off) |
Input Type: | Standard |
Gate Charge: | 226nC |
Td (on/off) @ 25°C: | -/208ns |
Test Condition: | 400V, 40A, 10 Ohm, 15V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
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The STGW40V60DLF is one of the single IGBTs, or insulated gate bipolar transistors, available from the STMicroelectronics family of products. An IGBT is a type of power semiconductor device that combines the best qualities of both MOSFETs (metal-oxide-semiconductor field-effect transistors) and bipolar junction transistors (BJTs), and is used in many applications such as high-power switching, variable speed motors, high-frequency switching, and variable speed drives. The STGW40V60DLF is a wide band-gap IGBT that offers superior performance and reliability in a compact package.
The STGW40V60DLF is a high power device that is capable of easily handling up to 600V and 60A of current, with a collector-emitter breakdown voltage (VCE(BR)) of 600V and a collector to emitter voltage (V(CE)) maximum of 800V. It also features a low on-state resistance of 8mΩ, a typical forward voltage drop of 2V, an avalanche withstand voltage of 600V, and a working temperature range from -40°C to 125°C.
The application field of the STGW40V60DLF is quite diverse due to its exceptional power handling capabilities, including applications such as motor drives, welding machines, battery charging, and renewable energy systems. The device is also ideal for resonance switching applications due to its wide frequency operating range and fast switching speed of 900V/µs. It is also suitable for hard switching applications such as motor control drive, UPS inverter, and power supplies.
The working principle of the STGW40V60DLF is relatively simple. This IGBT works by having an insulated gate controlling the current flow between its collector and emitter electrodes. When the gate voltage is below the gate threshold voltage, the device is in the off state, blocking current from flowing between the electrodes. When the gate voltage is raised above the gate threshold voltage, the IGBT is in the on state, allowing current to flow between the electrodes. The insulated gate also prevents reverse current from flowing through the device.
The STGW40V60DLF is an ideal choice for many demanding applications due to its wide voltage and current rating, high reliability, and wide operating temperature range. With its 800V/60A rating, it is capable of handling large loads without compromising its impressive power handling capabilities. It is also an excellent choice for high-frequency switching, variable speed motors, and variable speed drives. The STGW40V60DLF is an invaluable addition to the line of IGBTs from STMicroelectronics, providing reliable and efficient power switching and control in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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